Publisher : The Korean Institute of Electromagnetic Engineering and Science
DOI : 10.5515/KJKIEES.2016.27.1.50
Title & Authors
A Design of Power Amplifier with Broadband and High Linearity for 4G Application in 0.11 μm CMOS Process Kim, Ki-Hyun; Ko, Jae-Yong; Nam, Sang-Wook;
This work shows that the design and test results of a power amplifier(PA) with broadband and high linearity for 4G applications in CMOS process. A 1:2-transformer is designed for load impedance matching of PA and a inter-stage matching is implemented for a linearity. A designed PA achieves more than 27.3 dBm of linear output power and 26.1 % of power-added efficiency(PAE) under an adjacent channel leakage ratio(ACLR) of -30 dBc for a LTE 16-QAM 10 MHz signal with a carrier frequency range of 1.8 to 2.3 GHz.
J. Boshi, J. Moon, C. Zhao, and B. Kim, "A 30.8-dBm wideband CMOS power amplifier with minimized supply fluctuation", IEEE Trans. Microw. Theory Tech., vol. 60, no. 6, pp. 1658-1666, Jun. 2012.
B. Francois, P. Reynaert, "Highly linear fully integrated wideband RF PA for LTE-advanced in 180-nm SOI", IEEE Trans. Microw. Theory Tech., vol. 63, no. 2, pp. 649-658, Feb. 2015.
S. Leuschner, J. -E. Mueller, and H. Klar, "A 1.8 GHz wide-band stacked-cascode CMOS power amplifier for W-CDMA application in 65 nm standard CMOS", in IEEE RFIC Symp., pp. 1-4, Jun. 2011.
S. Pornpromlikit, J. Jeong, C. Presti, A. Scuderi, and P. Asbeck, "A watt-level stacked-FET linear power amplifier in siliconon-insulator CMOS", IEEE Trans. Microw. Theory Tech., vol. 58, no. 1, pp. 57-64, 2010.
S. Jin, M. Kwon, K. Moon, B. Park, and B. Kim, "Control of IMD asymmetry of CMOS power amplifier for broadband operation using wideband signal", IEEE Trans. Microw. Theory Tech., vol. 61, no. 10, pp. 3753-3762, Oct. 2012. Symp., pp. 1-4, Jun. 2011.
Y. Lee, S. Hong, "A dual-power-mode output matching network fordigitally modulated CMOS power amplifier", IEEE Trans. Microw. Theory Techn., vol. 61, no. 4, pp. 1570-1579, Apr. 2013.
J. Brinkhoff, A. E. Parker, "Effect of baseband impedance on FET intermodulation", IEEE Trans. Microw. Theory Tech., vol. 51, no. 3, pp. 1045-1051, Mar. 2003.
B. Koo, Y. Na, and S. Hong, "Integrated bias circuits of RF CMOS cascode power amplifier for linearity enhan- cement", IEEE Trans. Microw. Theory Tech., vol. 60, no. 2, pp. 340-351, Feb. 2012.