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A Design of Power Amplifier with Broadband and High Linearity for 4G Application in 0.11 μm CMOS Process
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 Title & Authors
A Design of Power Amplifier with Broadband and High Linearity for 4G Application in 0.11 μm CMOS Process
Kim, Ki-Hyun; Ko, Jae-Yong; Nam, Sang-Wook;
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 Abstract
This work shows that the design and test results of a power amplifier(PA) with broadband and high linearity for 4G applications in CMOS process. A 1:2-transformer is designed for load impedance matching of PA and a inter-stage matching is implemented for a linearity. A designed PA achieves more than 27.3 dBm of linear output power and 26.1 % of power-added efficiency(PAE) under an adjacent channel leakage ratio(ACLR) of -30 dBc for a LTE 16-QAM 10 MHz signal with a carrier frequency range of 1.8 to 2.3 GHz.
 Keywords
ACLR;Linearity;Power Amplifier;Transformer;
 Language
Korean
 Cited by
 References
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