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0.25 μm AlGaN/GaN HEMT Devices and 9 GHz Power Amplifier
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 Title & Authors
0.25 μm AlGaN/GaN HEMT Devices and 9 GHz Power Amplifier
Kang, Dong-Min; Min, Byoung-Gue; Lee, Jong-Min; Yoon, Hyung-Sup; Kim, Sung-Il; Ahn, Ho-Kyun; Kim, Dong-Young; Kim, Hae-Cheon; Lim, Jong-Won; Nam, Eun-Soo;
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This paper describes the successful development and the performance of X-band 50 W pulsed power amplifier using a 50 W GaN-on-SiC high electron mobility transistor. The GaN HEMT with a gate length of and a total gate width of 12 mm were fabricated. The X-band pulsed power amplifier exhibited an output power of 50 W with a power gain of 6 dB in a frequency range of 9.2~9.5 GHz. It also shows a maximum output power density of 4.16 W/mm. This 50 W GaN HEMT and X-band 50 W pulsed power amplifier are suitable for the radar systems and related applications in X-band.
 Cited by
X-대역 50 W급 펄스 모드 GaN HEMT 내부 정합 전력 증폭기,강현석;배경태;이익준;차현원;민병규;강동민;김동욱;

한국전자파학회논문지, 2016. vol.27. 10, pp.892-899 crossref(new window)
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