Publisher : The Korean Institute of Electromagnetic Engineering and Science
DOI : 10.5515/KJKIEES.2016.27.1.76
Title & Authors
0.25 μm AlGaN/GaN HEMT Devices and 9 GHz Power Amplifier Kang, Dong-Min; Min, Byoung-Gue; Lee, Jong-Min; Yoon, Hyung-Sup; Kim, Sung-Il; Ahn, Ho-Kyun; Kim, Dong-Young; Kim, Hae-Cheon; Lim, Jong-Won; Nam, Eun-Soo;
This paper describes the successful development and the performance of X-band 50 W pulsed power amplifier using a 50 W GaN-on-SiC high electron mobility transistor. The GaN HEMT with a gate length of and a total gate width of 12 mm were fabricated. The X-band pulsed power amplifier exhibited an output power of 50 W with a power gain of 6 dB in a frequency range of 9.2~9.5 GHz. It also shows a maximum output power density of 4.16 W/mm. This 50 W GaN HEMT and X-band 50 W pulsed power amplifier are suitable for the radar systems and related applications in X-band.
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