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Design of a 2.6 GHz GaN-HEMT Doherty Power Amplifier IC for Small-Cell Base Station Systems
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 Title & Authors
Design of a 2.6 GHz GaN-HEMT Doherty Power Amplifier IC for Small-Cell Base Station Systems
Lee, Hwiseob; Lim, Wonseob; Kang, Hyunuk; Lee, Wooseok; Lee, Hyoungjun; Yoon, Jeongsang; Lee, Dongwoo; Yang, Youngoo;
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This paper presents a 2.6 GHz Doherty power amplifier IC to enhance the back-off efficiency. In order to apply to small-cell base stations, the Doherty power amplifier was fabricated using GaN-HEMT process for high power density. In addition, the implemented Doherty power amplifier was mounted on a QFN package. The implemented GaN-HEMT Doherty power amplifier was measured using LTE downlink signal with 10 MHz bandwidth and 6.5 dB PAPR for verification. A power gain of 15.8 dB, a drain efficiency of 43.0 %, and an ACLR of -30.0 dBc were obtained at an average output power level of 33.9 dBm.
GaN-HEMT;Doherty Power Amplifier;Small-Cell Base Station;LTE;
 Cited by
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