J. Son, Y. Park, I. Kim, J. Moon, and B. Kim, "Broadband saturated power amplifier with harmonic control circuits", IEEE Microw. Wireless Compon. Lett., vol. 24, no. 3, pp. 2013-2015, Mar. 2014.
J. Staudinger, P. Hart, and D. Holmes, "Behavioral modeling of Si LDMOS pre-matched devices with application to Doherty power amplifiers", in Power Amplifiers for Wireless and Radio Applications(PAWR), 2012 IEEE Topical Conf. on, pp. 89-92, Jan. 2012.
H. Deguchi, N. Ui, K. Ebihara, K. Inoue, N. Yoshimura, and H. Takahashi, "A 33 W GaN HEMT Doherty amplifier with 55 % drain efficiency for 2.6 GHz base stations", in Proc. IEEE MTT-S Int. Microw. Symp. Dig., pp. 1273-1276, Jun. 2009.
A. Maekawa, T. Yamamoto, E. Mitani, and S. Sano, "A 500 W push-pull AlGaN/GaN HEMT amplifier for Lband high power application", in Proc. IEEE MTT-S Int. Microw. Symp. Dig., pp. 722-725, Jun. 2006.
J. Cheron, M. Campovecchio, D. Barataud, T. Reveyrand, M. Stanislawiak, and P. Eudeline, "Harmonic control in package of power GaN transistors for high efficiency and wideband performances in S-band", in European Microw. Conf. pp. 1111-1114, Oct. 2011.
J. Cheron, M. Campovecchio, D. Barataud, T. Reveyrand, M. Stanislawiak, P. Eudeline, and D. Floriot, "Over 70 % PAE packaged GaN HEMT through wideband internal matching at second harmonic in S-band", Electron Lett, vol. 48, Issue 13, pp. 770-772, 2012.
S. Miwa, Y. Kamo, Y. Kittaka, T. Yamasaki, Y. Tsukahara, T. Tanii, M. Kohno, S. Goto, and A. Shima, "A 67 % PAE, 100 W GaN power amplifier with on-chip harmonic tuning circuit for C-band space applications", IEEE MTT-S Int. Microw. Symp. Dig., WE3D-1, Jun. 2011.
H. Otsuka, K. Yamanaka, H. Noto, Y. Tsuyama, S. Chaki, A. Inoue, and M. Miyazaki, "Over 57 % efficiency C-band GaN HEMT high power amplifier with internal harmonic manipulation circuits", IEEE MTT-S Int. Microw. Symp. Dig., pp. 311-314, Jun. 2008.
M. Kimura, K. Yamauchi, K. Yamanaka, H. Noto, E. Kuwata, H. Otsuka, A. Inoue, Y. Kamo, and M. Miyazaki, "GaN X-band 43 % internally-matched FET with 60 W output power", in Proc. Asia-Pacific Microw. Conf., pp. 1-4, 2008.
Y. Yang, J. Yi, Y. Woo, and B. Kim, "Optimum design for linearity and efficiency of microwave Doherty amplifier using a new load matching technique", Microw J., vol. 44, no. 12, pp. 20-36, Dec. 2001.
H. Park, J. Van, M. Kim, H. Cho, S. Kwon, J. Jeong, K. Lim, C. Park, and Y. Yang, "A new compact load network for Doherty amplifiers using an imperfect quarter- wave line", IEEE Trans. Microw. Theory Tech., vol. 55, no. 11, pp. 2313-2319, Nov. 2007.
G. Ahn, M. Kim, H. Park, S. Jung, J. Van, H. Cho, S. Kwon, J. Jeong, K. Lim, J. Kim, S. Song, C. Park, and Y. Yang, "Design of a high-efficiency and high-power inverted Doherty amplifier", IEEE Trans. Microw. Theory Tech., vol. 55, no. 6, pp. 1105-1111, Nov. 2007.
M. Seo, M. Song, J. Gu, H. Kim, J. Ham, C. Park, and Y. Yang, "Three-stage Doherty amplifier with uneven input splitter", Microw. and Opt. Techn. Lett, vol. 55, no. 6, pp. 1405-1409, Jun. 2013.
J. Kwon, M. Seo, H. Lee, J. Gu, J. Ham, K. Hwang, K. Lee, C. Park, and Y. Yang, "Broadband Doherty power amplifier based on asymmetric load matching networks", IEEE Trans. Circuits Syst. II Exp. Briefs, vol. 62, no. 6, pp.533-537, Jun. 2015.
D. Jang, J. Kim, and J. Kim, "46-W high efficiency unbalanced Doherty power amplifier in extended output power back-off", Microw. and Opt. Techn. Lett, vol. 54, no. 7, pp. 1612-1614, Jul. 2012.
S. Chun, D. Jang, J. Kim, and J. Kim, "Inverted asymmetric Doherty power amplifier driven by two-stage symmetric Doherty amplifier", Electron Lett, vol. 46, no. 17, pp. 1208-1209, Aug. 2010.
N. Ui, H. Sano, and S. Sano, "A 80 W 2-stage GaN HEMT Doherty amplifier with —50 dBc ACLR, 42 % efficiency 32 dB gain with DPD for W-CDMA base station", in IEEE MTT-S Int. Microw. Symp. Dig., pp. 1259-1262, Aug. 2007.
H. Deguchi, N. Watanabe, A. Kawano, N. Yoshimura, N. Ui, and K. Ebihara, "A 2.6 GHz band 537W peak power GaN HEMT asymmetric Doherty amplifier with 48 % drain efficiency at 7 dB", in IEEE MTT-S Int. Microw. Symp. Dig., pp. 1-3, Jun. 2012.
N. Yoshimura, H. Umeta, N. Watanabe, H. Deguchi, and N. Ui, "A 2.5-2.7 GHz broadband 40W GaN HEMT Doherty amplifier with higher than 45 % drain efficiency for multi-band application", in Power Amplifiers for Wireless and Radio Applications(PAWR), 2012 IEEE Topical conf. on, pp.53-56, Jan. 2012.