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A 2.65 GHz Doherty Power Amplifier Using Internally-Matched GaN-HEMT
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 Title & Authors
A 2.65 GHz Doherty Power Amplifier Using Internally-Matched GaN-HEMT
Kang, Hyunuk; Lee, Hwiseob; Lim, Wonseob; Kim, Minseok; Lee, Hyoungjun; Yoon, Jeongsang; Lee, Dongwoo; Yang, Youngoo;
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 Abstract
This paper presents a 2.65 GHz Doherty power amplifier with internally-matched GaN HEMT. Internal matching circuits were adopted to match its harmonic impedances inside the package. Simultaneously, due to the partially matched fundamental impedance, input and output matching networks become simpler. Bond wires and parasitic elements of transistor package were predicted by EM simulation. For the LTE signal with 6.5 dB PAPR, the implemented Doherty power amplifier shows a power gain of 13.0 dB, a saturated output power of 55.4 dBm, an efficiency of 49.1 %, and ACLR of -26.3 dBc at 2.65 GHz with an operating voltage of 48 V.
 Keywords
GaN-HEMT;Doherty Power Amplifier;Internal Matching Circuit;Package;
 Language
Korean
 Cited by
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