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Design of a W-Band Power Amplifier Using 65 nm CMOS Technology
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 Title & Authors
Design of a W-Band Power Amplifier Using 65 nm CMOS Technology
Kim, Jun-Seong; Kwon, Oh-yun; Song, Reem; Kim, Byung-Sung;
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 Abstract
In this paper, we propose 77 GHz power amplifier for long range automotive collision avoidance radar using 65 nm CMOS process. The proposed circuit has a 3-stage single power amplifier which includes common source structure and transformer. The measurement results show 18.7 dB maximum voltage gain at 13 GHz 3 dB bandwidth. The measured maximum output power is 10.2 dBm, input is -12 dBm, output is 5.7 dBm, and maximum power add efficiency is 7.2 %. The power amplifier consumes 140.4 mW DC power from 1.2 V supply voltage.
 Keywords
Power Amplifier;CMOS;W-Band;
 Language
Korean
 Cited by
 References
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