Implementation and Problem Analysis of Phase Shifted dc-dc Full Bridge Converter with GaN HEMT

Title & Authors
Implementation and Problem Analysis of Phase Shifted dc-dc Full Bridge Converter with GaN HEMT
Joo, Dong-Myoung; Kim, Dong-Sik; Lee, Byoung-Kuk; Kim, Jong-Soo;

Abstract
Gallium nitride high-electron mobility transistor (GaN HEMT) is the strongest candidate for replacing Si MOSFET. Comparing the figure of merit (FOM) of GaN with the state-of-the-art super junction Si MOSFET, the FOM is much better because of the wide band gap characteristics and the heterojunction structure. Although GaN HEMT has many benefits for the power conversion system, the performance of the power conversion system with the GaN HEMT is sensitive because of its low threshold voltage ($\small{V_{th}}$) and even lower parasitic capacitance. This study examines the characteristics of a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT. The problem of unoptimized dead time is analyzed on the basis of the output capacitance of GaN HEMT. In addition, the printed circuit board (PCB) layout consideration is analyzed to reduce the negative effects of parasitic inductance. A comparison of the experimental results is provided to validate the dead time and PCB layout analysis for a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT.
Keywords
GaN HEMT;Cascode GaN;Phase shifted dc-dc full bridge converter;
Language
Korean
Cited by
1.
Wide Bandgap 소자의 안정적 구동을 위한 하드웨어 최적 설계 및 구현,김동식;주동명;이병국;김종수;

전기학회논문지, 2016. vol.65. 1, pp.88-96
1.
Design and Implementation of an Optimal Hardware for a Stable Operating of Wide Bandgap Devices, The Transactions of The Korean Institute of Electrical Engineers, 2016, 65, 1, 88
References
1.
S. Y. Park, P. Sun, W. Yu, and J. S. Lai, "Performance evaluation of high voltage super junction MOSFETs for zero-voltage soft-switching inverter applications," IEEE Applied Power Electronics Conference and Exposition(APEC2010) , pp. 387-391, Feb. 21-25, 2010.

2.
J. Millan, P. Godignon, X. Perpina, A. Perez-Tomas, and J. Rebollo, “Survey of wide bandgap power semiconductor devices,” IEEE Trans. Power Electron., Vol. 29, No. 5, pp. 2155-2163, 2014.

3.
S. Ji, D. Reusch, and F. C. Lee, “High-frequency high power density 3-D integrated gallium-nitride-based point of load module design,” IEEE Trans. Power Electron., Vol. 28, No. 9, pp. 4216-4226, 2013.

4.
D. Reusch and J. Strydom, “Understanding the effect of PCB layout on circuit performance in a high-frequency gallium-nitride-based point of load converter,” IEEE Trans. Power Electron., Vol. 29, No. 4, pp. 2008-2015, 2014.

5.
X. Huang, Q. Li, Z. Liu, and F. C. Lee, "Analytical loss model of high voltage gaN HEMT in cascode configuration," IEEE Trans. Power Electron., Vol. 29, No. 5, pp. 2208-2219, 2014.

6.
S. Abdel-Rahman, "Design of phase shifted full-bridge converter with current doubler rectifier," Infineon Technologies AG, DE, pp. 9, 2013.

7.