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Implementation and Problem Analysis of Phase Shifted dc-dc Full Bridge Converter with GaN HEMT
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 Title & Authors
Implementation and Problem Analysis of Phase Shifted dc-dc Full Bridge Converter with GaN HEMT
Joo, Dong-Myoung; Kim, Dong-Sik; Lee, Byoung-Kuk; Kim, Jong-Soo;
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 Abstract
Gallium nitride high-electron mobility transistor (GaN HEMT) is the strongest candidate for replacing Si MOSFET. Comparing the figure of merit (FOM) of GaN with the state-of-the-art super junction Si MOSFET, the FOM is much better because of the wide band gap characteristics and the heterojunction structure. Although GaN HEMT has many benefits for the power conversion system, the performance of the power conversion system with the GaN HEMT is sensitive because of its low threshold voltage () and even lower parasitic capacitance. This study examines the characteristics of a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT. The problem of unoptimized dead time is analyzed on the basis of the output capacitance of GaN HEMT. In addition, the printed circuit board (PCB) layout consideration is analyzed to reduce the negative effects of parasitic inductance. A comparison of the experimental results is provided to validate the dead time and PCB layout analysis for a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT.
 Keywords
GaN HEMT;Cascode GaN;Phase shifted dc-dc full bridge converter;
 Language
Korean
 Cited by
1.
Design and Implementation of an Optimal Hardware for a Stable Operating of Wide Bandgap Devices, The Transactions of The Korean Institute of Electrical Engineers, 2016, 65, 1, 88  crossref(new windwow)
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