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Controlling the Properties of Graphene using CVD Method: Pristine and N-doped Graphene
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 Title & Authors
Controlling the Properties of Graphene using CVD Method: Pristine and N-doped Graphene
Park, Sang Jun; Lee, Imbok; Bae, Dong Jae; Nam, Jungtae; Park, Byung Jun; Han, Young Hee; Kim, Keun Soo;
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 Abstract
In this research, pristine graphene was synthesized using methane () gas, and N-doped graphene was synthesized using pyridine () liquid source by chemical vapor deposition (CVD) method. Basic optical properties of both pristine and N-doped graphene were investigated by Raman spectroscopy and XPS (X-ray photoemission spectroscopy), and electrical transport characteristics were estimated by current-voltage response of graphene channel as a function of gate voltages. Results for CVD grown pristine graphene from methane gas show that G-peak, 2D-peak and C1s-peak in Raman spectra and XPS. Charge neutral point (CNP; Dirac-point) appeared at about +4 V gate bias in electrical characterization. In the case of pyridine based CVD grown N-doped graphene, D-peak, G-peak, weak 2D-peak were observed in Raman spectra and C1s-peak and slight N1s-peak in XPS. CNP appeared at -96 V gate bias in electrical characterization. These result show successful control of the property of graphene artificially synthesized by CVD method.
 Keywords
Graphene;Chemical vapor deposition (CVD);pyridine();Doping;Controlling of Properties;
 Language
Korean
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