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Influence of the process conditions for the amorphous silicon on the HSG-Si formation
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 Title & Authors
Influence of the process conditions for the amorphous silicon on the HSG-Si formation
Jeong, Jae-Young; Kang, Seong-Jun; Joung, Yang-Hee;
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 Abstract
In this paper, the processing conditions of the amorphous silicon film growth were investigated the effect in forming the HSG-Si on the surface of the storage electrode. As a result, when the amorphous silicon film phosphorus concentration is greater than , HSG-Si is not formed correctly and showed the concentration dependency of HSG formation. Also, the optimum condition of the phosphorus concentration for amorphous silicon and HSG thickness are and , respectively, because of the HSG thickness over the create to bit failure according to a short of the electrodes and the electrode.
 Keywords
Amorphous Silicon;Storage Electrode;Phosphorus;Concetration;
 Language
Korean
 Cited by
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