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Study on the Trap Parameters according to the Nitridation Conditions of the Oxide Films
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 Title & Authors
Study on the Trap Parameters according to the Nitridation Conditions of the Oxide Films
Yoon, Woon-Ha; Kang, Seong-Jun; Joung, Yang-Hee;
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 Abstract
In this paper, the MIS(: Metal-Insulator-Semiconductor) Capacitor with the nitrided-oxide by RTP are fabricated to investigate the carrier trap parameters due to avalanche electron injection. Two times turn-around phenomenon of the flatband voltage shift generated by the avalanche injection are observed. This shows that electron trapping occurs in the oxide film at the first stage. As the electron injection increases, the first turn-around occures due to a positive charge in the oxide layer. After further injection, the curves turns around once again by electron captured. Based on the experimental results, the carrier trapping model for system having multi-traps is proposed and is fitting with experimental data in order to determine trap parameter of nitrided-oxide.
 Keywords
Oxide Films;Nitridation;Trap;Injection;
 Language
Korean
 Cited by
 References
1.
T. Ito, T. Nakamura, and H. Ishikawa, "Effect of Thermally Nitrided SiO2(Nitroxide) on MOS Characteristics," J. Electrochem. Soc, vol. 129, no. 1, 1982, pp. 184-188. crossref(new window)

2.
Y. Hayafuji and K. Kajiwara, "Nitridation of Silicon and Oxidized-Silicon," J. Electrochem. Soc., vol. 129, no. 9, 1982, pp. 2102-2108. crossref(new window)

3.
S. Mun, S. Kang, and Y. Joung, "A study on the DC parameter matching according to the shrink of 0.13um technology," J. of the Korea Institute of Electronic Communication Sciences, vol. 9, no. 11, 2014, pp. 1227-1232. crossref(new window)

4.
S. Mun, S. Kang, and Y. Joung, "A study on the Hot Carrier Injection Improvement of I/O Transistor," J. of the Korea Institute of Electronic Communication Sciences, vol. 0, no. 8, 2014, pp. 847-852. crossref(new window)

5.
S. Mun, S. Kang, and Y. Joung, "A study on Flicker Noise Improvement by Decoupled Plasma Nitridation," J. of the Korea Institute of Electronic Communication Sciences, vol. 9, no. 7, 2014, pp. 747-752. crossref(new window)

6.
T. Ito, H. Arakawa, T. Nozaki, and H. Ishikawa, "Retardation of Destructive Breakdown of SiO2 Films Annealed in Ammonia Gas," J. Electrochem. Soc., vol. 127, no. 10, 1980, pp. 2248-2251. crossref(new window)

7.
G. Ruggles and J. Monkowski, "An Investigation of Fixed Charge Buildup in Nitrided Oxides," J. Electrochem. Soc., vo1. 133, no. 4, 1986, pp. 787-793. crossref(new window)

8.
T. Kusaka, A. Hiraiwa, and K. Mukai, "Mobility Degradation of Nitrided Oxide MISFET's," J. Electrochem. Soc., vol. 135, no. 1, 1988, pp. 166-172. crossref(new window)

9.
C. Sah, Y. Cun, and J. Tzou, "Generation annealing Kinetics of the interface donor states at 0.25eV above the midgap and the turn-around phenomena on oxidized silicon during avalanche electron injection," J. of Applied Physics, vol. 54, no. 5, 1983, pp. 2547-2555. crossref(new window)

10.
C. Tah, Y. Sun, and J. Tzou, "Generation annealing Kinetics and atomic models of a compensating donor in the surface space charge layer of oxidized silicon," J. Appl. Phys., vol. 54, 1983, pp. 944-952. crossref(new window)

11.
S. Tantelides, "The electronic structure of impurities and defects in SiO2," Thin Solid Films, vol. 89, no. 1, 1982, pp. 103-108. crossref(new window)

12.
G, Hu and C. Johnson, "Relationship between trapped holes and interface states in MOS capacitors," J. of Appl. Phys. Lett., vol. 36, no. 7, 1980, pp. 590-592. crossref(new window)