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Design of OP-AMP using MOSFET of Sub-threshold Region
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 Title & Authors
Design of OP-AMP using MOSFET of Sub-threshold Region
Cho, Tae-Il; Yeo, Sung-Dae; Cho, Seung-Il; Kim, Seong-Kweon;
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 Abstract
In this paper, we suggest the design of OP-AMP using MOSFET in the operation of sub-threshold condition as a basic unit of an IoT. The sub-threshold operation of MOSFET is useful for an ultra low power consumption of sensor network system in the IoT, because it cause the supply voltage to be reduced. From the simulation result using 0.35 um CMOS process, the supply voltage, VDD can be reduced with 0.6 V, open-loop gain of 43 dB and the power consumption was evaluated with about and the active size for an integration was measured with . It is expected that the proposed circuit is applied to the low power sensor network for IoT.
 Keywords
Sub-threshold;Low Power;OP-AMP;IoT;Sensor Network;
 Language
Korean
 Cited by
 References
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