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Trend and issues of the bulk FinFET
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  • Journal title : Vacuum Magazine
  • Volume 3, Issue 1,  2016, pp.16-21
  • Publisher : The Korean Vacuum Society
  • DOI : 10.5757/vacmac.3.1.16
 Title & Authors
Trend and issues of the bulk FinFET
Lee, Jong-Ho; Choi, Kyu-Bong;
  PDF(new window)
FinFETs are able to be scaled down to 22 nm and beyond while suppressing effectively short channel effect, and have superior performance compared to 2-dimensional (2-D) MOSFETs. Bulk FinFETs are built on bulk Si wafers which have less defect density and lower cost than SOI(Silicon-On-Insulator) wafers. In contrast to SOI FinFETs, bulk FinFETs have no floating body effect and better heat transfer rate to the substrate while keeping nearly the same scalability. The bulk FinFET has been developed at 14 nm technology node, and applied in mass production of AP and CPU since 2015. In the development of the bulk FinFETs at 10 nm and beyond, self-heating effects (SHE) is becoming important. Accurate control of device geometry and threshold voltage between devices is also important. The random telegraph noise (RTN) would be problematic in scaled FinFET which has narrow fin width and small fin height.
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