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Study on future electronic device using graphene
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  • Journal title : Vacuum Magazine
  • Volume 3, Issue 1,  2016, pp.22-31
  • Publisher : The Korean Vacuum Society
  • DOI : 10.5757/vacmac.3.1.22
 Title & Authors
Study on future electronic device using graphene
Lee, Sang kyung; Kim, Yun Ji; Lee, Byoung Hun;
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Although graphene has been considered as one of the promise materials for future logic devices due to extremely high mobility, its applications in electronics have been limited to a few cases such as a flexible interconnect, and RF devices. Furthermore, most of the studies on graphene devices reported unstable operations, claimed to be due to the poor quality of graphene. Nevertheless, recent studies showed that the electrical performance of graphene field effect transistor could be stabilized even with CVD graphene when well-established integration processes to control the interface of graphene were used. These results indicate that as in the case of silicon devices, a proper control of graphene interface is very important for the stable operation of graphene device as well as other 2D material based devices.
 Cited by
H.-S.P. Wong, IBM Journal of Research and Development 46(2-3), 133 (2002). crossref(new window)

Mark Bohr, Intel Developer Forum, (2014).

P. Packan, S. Akbar, M. Armstrong, D. Bergstrom, M. Brazier, H. Deshpande, K. Dev, G. Ding, T. Ghani, O. Golonzka, et al., IEDM, (2009).

K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, A.A. Firsov, Science 306, 666 (2004). crossref(new window)

N. Planes, O. Weber, V. Barral, S. Haendler, D. Noblet, D. Croain, M. Bocat, P.-O. Sassoulas, X. Federspiel, A. Cros, et al., VLSI, (2012).

A.K. Geim, K.S. Novoselov, Nature materials 6, 183 (2007). crossref(new window)

K.I. Bolotin, K.J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, H.L. Stormer, Solid State Communications 146, 351 (2008). crossref(new window)

S. Takagi, A. Toriumi, M. Iwase, H. Tango, IEEE Trans. Electron Devices 41(12), 2357 (1994). crossref(new window)

X. Li, C.W. Magnuson, A. Venugopal, R.M. Tromp, J.B. Hannon, E.M. Vogel, L. Colombo, R.S. Ruoff, J. Am. Chem. Soc. 133, 2816 (2011). crossref(new window)

S. Bae, H. Kim, Y. Lee, X. Xu, J. Park, Y. Zheng, J. Balakrishnan, T. Lei, H. Kim, Y. Song, Y. Kim, K. Kim, B. Ozyilmaz, J. Ahn, B. Hong, S. Iijima, Nature nanotechnology 20, 574 (2010).

B. Fallahazad, K. Lee, G. Lian, S. Kim, C.M. Corbet, D.A. Ferrer, L. Colombo, E. Tutuc, Appl. Phys. Lett. 100, 093112 (2012). crossref(new window)

F. Speck, M. Ostler, J. Rohrl, K.V. Emtsev, M. Hundhausen, L. Ley, and T. Seyller, Phys. Status Solidi C 7, 398 (2010). crossref(new window)

Y. Xuan, Y.Q. Wu, T. Shen, M. Qi, M.A. Capano, J.A. Cooper, and P.D. Ye, Appl. Phys. Lett. 92, 013101 (2008). crossref(new window)

B. Lee, S.-Y. Park, H.-C. Kim, K. Cho, E.M. Vogel, M.J. Kim, R.M. Wallace, and J. Kim, Appl. Phys. Lett. 92, 203102 (2008). crossref(new window)

YG. Lee, CG. Kang, U. Jung, J. Kim, H. Hwang, H. Chung, S. Seo, R. Choi, BH. Lee, Appl. Phys. Lett. 98, 183508 (2011). crossref(new window)

A. A.Sagade, D. Neumaier, D. Schall, M. Otto, A. Pesquera, A. Centeno, A. ZurutuzaElorza, and H. Kurz, Nanoscale 7, 3558 (2015). crossref(new window)

H. Wang, Y. Wu, C. Cong, J. Shang, and T. Yu, ACS Nano 4, 7221 (2010). crossref(new window)

A. Veligura, P.J. Zomer, I.J. Vera-Marun, C. Jozsa, P.I. Gordiichuk, and B.J. van Wees, J. Appl. Phys. 110, 113708 (2011). crossref(new window)

G. Kalon, Y.J. Shin, V.G. Truong, A. Kalitsov, and H. Yang, Appl. Phys. Lett. 99, 083109 (2011). crossref(new window)

J. Mohrmann, K. Watanabe, T. Taniguchi, and R. Danneau, Nanotechnology 26, 015202 (2014).

CG.Kang, YG.Lee, SK.Lee, E.Park, C.Cho, S.Lim, H.Hwang, BH.Lee, Carbon 53, 182 (2013). crossref(new window)

H. Sojoudi, J. Baltazar, C. Henderson, and S. Graham, J. Vac. Sci. Technol. B 30, 041213 (2012). crossref(new window)

J. Chan, A. Venugopal, A. Pirkle, S. McDonnell, D. Hinojos, C.W. Magnuson, R.S. Ruoff, L. Colombo, R.M. Wallace, and E.M. Vogel, (2012).

F. Schedin, A.K. Geim, S.V. Morozov, E.W. Hill, P. Blake, M.I. Katsnelson, and K.S. Novoselov, Nat. Mater. 6, 652 (2007). crossref(new window)

Y. Yang, K. Brenner, and R. Murali, Carbon 50, 1727 (2012). crossref(new window)

M. Drapeko, Appl. Phys. Lett. 104, 221604 (2014). crossref(new window)

C.W. Jang, J.H. Kim, J.M. Kim, D.H. Shin, S. Kim, and S.-H. Choi, Nanotechnology 24, 405301 (2013). crossref(new window)

C. Hummel, F. Schwierz, A. Hanisch, and J. Pezoldt, Phys. Status Solidi B 247, 903 (2010).

S. Ryu, L. Liu, S. Berciaud, Y.-J. Yu, H. Liu, P. Kim, G.W. Flynn, and L.E. Brus, Nano Lett. 10, 4944 (2010). crossref(new window)

S. Ryu, L. Liu, S. Berciaud, Y.-J. Yu, H. Liu, P. Kim, G.W. Flynn, L.E. Brus, Nano Lett. 10, 4944 (2010). crossref(new window)

I. Jung, D. Dikin, S. Park, W. Cai, S.L. Mielke, R.S. Ruoff, J. Phys. Chem. C 112, 20264 (2008). crossref(new window)

J. Chan, A. Venugopal, A. Pirkle, S. McDonnell, D. Hinojos, C.W. Magnuson, R.S. Ruoff, L. Colombo, R.M. Wallace, and E.M. Vogel, ACS Nano 6, 3224 (2012). crossref(new window)

BH. Lee, YG. Lee, U. Jung, Y. Kim, H. Hwang, J. Kim, CG. Kang, Carbon Lett. 13, 23 (2012). crossref(new window)

Y.H. Zhang, H.R. Zhang, B. Wang, Z.Y. Chen, Y.Q. Zhang, B. Wang, Y.P. Sui, B. Zhu, C.M. Tang, X.L. li, X.M. Xie, G.H. Yu, Z. Jin, X.Y. Liu, Appl. Phys. Lett. 104, 143110 (2014). crossref(new window)

X. Chen, Z. Liu, C. Zheng, F. Xign, X. Yan, Y. Chen, J. Tian, Carbon 56, 271 (2013). crossref(new window)

C. Cho, YG. Lee, U. Jung, CG. Kang, S. Lim, H. Hwang, H. Choi, BH. Lee, Appl. Phys. Lett. 103, 083110 (2013). crossref(new window)

M. Jang, T.Q. Trung, J.-H. Jung, B.-Y. Kim, and N.-E. Lee, Phys. Chem. Chem. Phys. 16, 4098 (2014). crossref(new window)

H.J. Jeong, H.Y. Kim, S.Y. Jeong, J.T. Han, K.-J. Baeg, J.Y. Hwang, and G.-W. Lee, Carbon 66, 612 (2014). crossref(new window)

K. Kumar, Y.-S. Kim, and E.-H. Yang, Carbon 65, 35 (2013). crossref(new window)

C.-J. Shih, G.L.C. Paulus, Q.H. Wang, Z. Jin, D. Blankschtein, and M.S. Strano, Langmuir 28, 8579 (2012). crossref(new window)

X. Liang, B.A. Sperling, I. Calizo, G. Cheng, C.A. Hacker, Q. Zhang, Y. Obeng, K. Yan, H. Peng, Q. Li, X. Zhu, H. Yuan, A.R. Hight Walker, Z. Liu, L. Peng, and C.A. Richter, ACS Nano 5, 9144 (2011). crossref(new window)

J.W. Suk, W.H. Lee, J. Lee, H. Chou, R.D. Piner, Y. Hao, D. Akinwande, and R.S. Ruoff, Nano Lett. 13, 1462 (2013). crossref(new window)

M.J. Hollander, M. Labella, Z.R. Hughes, M. Zhu, K.A. Trumbull, R. Cavalero, D.W. Snyder, X. Wang E. Hwang, S. Datta, J.A. Robinson, Nano Letters 11, 3601 (2011). crossref(new window)

R. Rammula, L. Aarik, A. Kasikov, J. Kozlova, T. Kahro, L. Matisen, A. Niilisk, H. Alles, and J. Aarik, IOP Conf. Ser. Mater. Sci. Eng. 49, 012014 (2013).

Y. Zhang, Z. Qiu, X. Cheng, H. Xie, H. Wang, X. Xie, Y. Yu, and R. Liu, J. Phys. Appl. Phys. 47, 055106 (2014). crossref(new window)

V. Wheeler, N. Garces, L. Nyakiti, R. Myers-Ward, G. Jernigan, J. Culbertson, C. Eddy Jr., D. Gaskill, Carbon 50, 2307 (2012). crossref(new window)

YG. Lee, CG. Kang, C. Cho, Y. Kim, H. Hwang, BH. Lee, Carbon 60, 453 (2013). crossref(new window)

S. Russo, M.F. Craciun, M. Yamamoto, A.F. Morpurgo, S. Tarucha, Physica E 42, 677 (2010). crossref(new window)

K. Nagashio, T. Nishimura, K. Kita, A. Toriumi, Appl. Phys. Lett. 97, 143514 (2010). crossref(new window)

C. Cho, SK. Lee, JW. Noh, W. Park, S. Lee, YG. Lee, H. Hwang, CG. Kang, M. Ham, BH. Lee, Appl. Phys. Lett. 106, 213107 (2015). crossref(new window)

SM. Song, JK. Park, OJ. Sul, BJ. Cho, Nano Letters 12, 3887 (2012). crossref(new window)

J.W. Suk, A. Kitt, C.W. Magnuson, Y. Hao, S. Ahmed, J. An, A.K. Swan, B.B. Goldberg, and R.S. Ruoff, ACS Nano 5, 6916 (2011). crossref(new window)

Y. Wang, Y. Zheng, X. Xu, E. Dubuisson, Q. Bao, J. Lu, and K.P. Loh, ACS Nano 5, 9927 (2011). crossref(new window)

L. Gao, W. Ren, H. Xu, L. Jin, Z. Wang, T. Ma, L.-P. Ma, Z. Zhang, Q. Fu, L.-M. Peng, X. Bao, and H.-M. Cheng, Nat. Commun. 3, 699 (2012). crossref(new window)

X.-D. Chen, Z.-B. Liu, W.-S. Jiang, X.-Q. Yan, F. Xing, P. Wang, Y. Chen, and J.-G. Tian, Sci. Rep. 3, (2013).

M. Kim, H. An, W.-J. Lee, and J. Jung, Electron. Mater. Lett. 9, 517 (2013). crossref(new window)

J. Lee, Y. Kim, H.-J. Shin, C. Lee, D. Lee, C.-Y. Moon, J. Lim, and S.C. Jun, Appl. Phys. Lett. 103, 103104 (2013). crossref(new window)

Y. Lee, S. Bae, H. Jang, S. Jang, S.-E. Zhu, S.H. Sim, Y.I. Song, B.H. Hong, and J.-H. Ahn, Nano Lett. 10, 490 (2010). crossref(new window)

G.H. HAN, H.-J. SHIN, E.S. KIM, S.J. CHAE, J.-Y. CHOI, and Y.H. LEE, Nano 06, 59 (2011). crossref(new window)

J. Kang, S. Hwang, J.H. Kim, M.H. Kim, J. Ryu, S.J. Seo, B.H. Hong, M.K. Kim, and J.-B. Choi, ACS Nano 6, 5360 (2012). crossref(new window)

C.J.L. de la Rosa, J. Sun, N. Lindvall, M.T. Cole, Y. Nam, M. Loffler, E. Olsson, K.B.K. Teo, and A. Yurgens, Appl. Phys. Lett. 102, 022101 (2013). crossref(new window)

W.C. Shin, T. Yoon, J.H. Mun, T.Y. Kim, S.-Y. Choi, T.-S. Kim, and B.J. Cho, Appl. Phys. Lett. 103, 243504 (2013). crossref(new window)

J. Song, F.-Y. Kam, R.-Q. Png, W.-L. Seah, J.-M. Zhuo, G.-K. Lim, P.K.H. Ho, and L.-L. Chua, Nat. Nanotechnol. 8, 356 (2013). crossref(new window)

D.-Y. Wang, I.-S. Huang, P.-H. Ho, S.-S. Li, Y.-C. Yeh, D.-W. Wang, W.-L. Chen, Y.-Y. Lee, Y.-M. Chang, C.-C. Chen, C.-T. Liang, and C.-W. Chen, Adv. Mater. 25, 4521 (2013). crossref(new window)

S. Cha, M. Cha, S. Lee, J.H. Kang, and C. Kim, Sci. Rep. 5, (2015).

C. Vilani, E.C. Romani, D.G. Larrude, G.M. Barbosa, and F.L. Freire, Appl. Surf. Sci. 356, 1300 (2015). crossref(new window)

S. Lee, SK. Lee, CG. Kang, C. Cho, YG. Lee, U. Jung, BH. Lee, Carbon 93, 286 (2015). crossref(new window)

U. Gosele, H. Stenzel, T. Martini, J. Steinkirchner, D. Conrad, K. Scheerschmidt, Appl. Phys. Lett. 67, 3614 (1995). crossref(new window)

YJ. Kim, YG. Lee, U. Jung, S. Lee, SK. Lee, BH. Lee, Nanoscale 7, 4013 (2015). crossref(new window)

A timeline of Semiconductors in Computers,