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High Speed Direct Bonding of Silicon Wafer Using Atmospheric Pressure Plasma
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 Title & Authors
High Speed Direct Bonding of Silicon Wafer Using Atmospheric Pressure Plasma
Cha, Yong-Won; Park, Sang-Su; Shin, Ho-Jun; Kim, Yong Taek; Lee, Jung Hoon; Suh, Il Woong; Choa, Sung-Hoon;
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In order to achieve a high speed and high quality silicon wafer bonding, the room-temperature direct bonding using atmospheric pressure plasma and sprayed water vapor was developed. Effects of different plasma fabrication parameters, such as flow rate of gas, flow rate of CDA (clear dry air), gap between the plasma head and wafer surface, and plasma applied voltage, on plasma activation were investigated using the measurements of the contact angle. Influences of the annealing temperature and the annealing time on bonding strength were also investigated. The bonding strength of the bonded wafers was measured using a crack opening method. The optimized condition for the highest bonding strength was an annealing temperature of and an annealing time of 2 hours. For the plasma activation conditions, the highest bonding strength was achieved at the plasma scan speed of 30 mm/sec and the number of plasma treatment of 4 times. After optimization of the plasma activation conditions and annealing conditions, the direct bonding of the silicon wafers was performed. The infrared transmission image and the cross sectional image of bonded interface indicated that there is no void and defects on the bonded wafers. The bonded wafer exhibited a bonding strength of average .
Silicon wafer;direct bonding;atmospheric pressure;plasma;bonding strength;
 Cited by
M. Shimbo, K. Furukawa, K. Fukuda and K. Tanzawa, "Silicon- to-silicon Direct Bonding Method", J. Appl. Phys., 60, 2987 (1986). crossref(new window)

C. T. Ko and K. N. Chen, "Low Temperature Bonding Technology for 3D Integration", Microelectronics Reliability, 52, 302 (2012). crossref(new window)

Y. H. Cho, S. E. Kim and S. Kim, "Wafer Level Bonding Technology for 3D Stacked IC", J. Microelectron. Packag. Soc., 20(1), 7 (2013).

S. Kang, J. Lee, E. Kim, N. Lim, S. Kim, S. Ki and S. E. Kim, "Fabrication and Challenges of Cu-to-Cu Wafer Bonding", J. Microelectron. Packag. Soc., 19(2), 29 (2012). crossref(new window)

V. Lehmann, K. Mitani, R. Stengl, T. Mii and U. Gosele, "Bubble-free Wafer Bonding of GaAs and InP on Silicon in a Microcleanroom", Jpn. J. Appl. Phys. Part 2, 28(12), L2141 (1989). crossref(new window)

Z. X. Xiong and J. P. Raskin, "Low-temperature Wafer Bonding: a Study of Void Formation and Influence on Bonding Strength", J. Microelectromech. Syst., 14(2), 368 (2005). crossref(new window)

T. Suni, K. Henttinen, I. Suni and J. Makinen, "Effects of Plasma Activation on Hydrophilic Bonding of Si and $SiO_2$", J. Electrochem. Soc., 149(6), G348 (2002). crossref(new window)

Q. Y. Tong, W. J. Kim, T. H. Lee and U. Gosele, "Low Vacuum Wafer Bonding", Electrochem. Solid-State Lett., 1(1), 52 (1998).

Y. W. Bo, T. C. Ming, W. Jun, D. S. Sheng and H. G. Yu, "Effect of Medium Vacuum on Low Temperature Wafer Bonding", J. Micromech. Microeng., 15(5), 1001 (2005). crossref(new window)

R. Malik, T. Shi, Z. Tang and S. Liu, "Effect of Ultra Violet Process and Annealing on Reliability in Low Temperature Silicon Wafer Direct Bonding", Adv. Sci. Lett., 4(3), 774 (2011). crossref(new window)

K. Ljungberg, U. Jansson, S. Bengtsson and A. Soderbarg, "Modification of Silicon Surfaces with $H_2SO_4:H_2O_2$:HF and $HNO_3$:HF for Wafer Bonding Applications", J. Electrochem. Soc., 143, 1709 (1996). crossref(new window)

G. L. Sun, J. Zhan, Q. Y. Tong, S. J. Xie, Y. M. Cai and S. J. Lu, "Cool Plasma Activated Surface in Silicon Wafer Direct Bonding Technology", Le Journal de Physique Colloques, 49(C4), 79 (1988).

M. Reiche, K. Gutjahr, D. Stolze, D. Burcyk and M. Petzold, "The Effect of Plasma Pretreatment on the Si/Si Bonding Behavior", Electrochem. Soc. Proc., 97-36, 437 (1997).

P. Amirfeiz, S. Bengtsson, M. Bergh, E. Zanghellini and L. Borjesson, "Formation of Silicon Structures by Plasma-activated Wafer Bonding", J. Electrochem. Soc. 147(7), 2693 (2000). crossref(new window)

C. S. Tan, A. Fan, K. N. Chen and R. Rief, "Low-temperature Thermal Oxide to Plasma-enhanced Chemical Vapor Deposition Oxide Wafer Bonding for Thin-film Transfer Application", Appl. Phys. Lett., 82, 2649 (2003). crossref(new window)

Q. Y. Tong and U. Gosele, Semiconductor Wafer Bonding, Wiley & Sons, New York (1999).

W. P. Maszara, G. Goetz, A. Caviglia and J. B. Mckitterick, "Bonding of Silicon Wafers for Silicon-on-insulator", J. Appl. Phys., 64(10), 4943 (1988). crossref(new window)

M. Eichler, B. Michel, M. Thomas, M. Gabriel and C.-P. Klages, "Atmospheric-pressure Plasma Pretreatment for Direct Bonding of Silicon Wafers at Low Temperatures", Surface & Coatings Technology, 203, 826 (2008). crossref(new window)

Drago Resnik, Danilo Vrtacnik, Uros Aljancic and Slavko Amon, "Study of Low-temperature Direct Bonding of (111) and (100) Silicon Wafers under Various Ambient and Surface Conditions", Sensors and Actuators, 80, 68 (2000). crossref(new window)

JIS Z 3198-7, "Test Methods for Lead-free Solders - Part 7: Shear Test of Soldered Joints of Chip Component", Translated and Published by Japanese Standards Association (2003).