Publisher : The Korean Microelectronics and Packaging Society
DOI : 10.6117/kmeps.2016.23.2.043
Title & Authors
Study on the Properties of TiO2 Film Deposited by ALD at Low Temperature Park, Won Hee; Shin, Jeong Woo; Yang, Byung Chan; Park, Man-Jin; Jang, Dong Young; An, Jihwan;
This paper covers the study on the properties of film deposited by atomic layer deposition (ALD) using TTIP and water at various temperatures including the low temperature range of <. At low deposition temperature, ALD films showed uniform growth rate per cycle (), good uniformity, smooth surface, and homogenous amorphicity. They also showed good conformality of >80% on the trench structure with the high aspect ratio of up to 75. However, relatively high concentration of impurities (C~4-7 at%) in the film was observed due to low deposition temperature.
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