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Study on the Properties of TiO2 Film Deposited by ALD at Low Temperature
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 Title & Authors
Study on the Properties of TiO2 Film Deposited by ALD at Low Temperature
Park, Won Hee; Shin, Jeong Woo; Yang, Byung Chan; Park, Man-Jin; Jang, Dong Young; An, Jihwan;
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This paper covers the study on the properties of film deposited by atomic layer deposition (ALD) using TTIP and water at various temperatures including the low temperature range of <. At low deposition temperature, ALD films showed uniform growth rate per cycle (), good uniformity, smooth surface, and homogenous amorphicity. They also showed good conformality of >80% on the trench structure with the high aspect ratio of up to 75. However, relatively high concentration of impurities (C~4-7 at%) in the film was observed due to low deposition temperature.
Atomic Layer Deposition;Low-Temperature Deposition;;Thin Film;
 Cited by
ALD YSZ 연료극 중간층 박막 적용을 통한 고체 산화물 연료전지의 성능 향상,안지환;김형준;유진근;오성국;

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