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Effects of Post-annealing and Temperature/Humidity Conditions on the Interfacial Adhesion Energies of ALD RuAlO Diffusion Barrier Layer for Cu Interconnects
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 Title & Authors
Effects of Post-annealing and Temperature/Humidity Conditions on the Interfacial Adhesion Energies of ALD RuAlO Diffusion Barrier Layer for Cu Interconnects
Lee, Hyeonchul; Jeong, Minsu; Bae, Byung-Hyun; Cheon, Taehun; Kim, Soo-Hyun; Park, Young-Bae;
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 Abstract
The effects of post-annealing and temperature/humidity conditions on the interfacial adhesion energies of atomic layer deposited RuAlO diffusion barrier layer for Cu interconnects were systematically investigated. The initial interfacial adhesion energy measured by four-point bending test was . The interfacial adhesion energy decreased to after 500 hrs at /85% T/H condition, while it increased to after annealing at for 500 hrs. The X-ray photoemission spectroscopy (XPS) analysis showed that delaminated interface was RuAlO/ for as-bonded and T/H conditions, while it was Cu/RuAlO for post-annealing condition. XPS O1s peak separation results revealed that the effective generation of strong Al-O-Si bonds between and interface at optimum post-annealing conditions is responsible for enhanced interfacial adhesion energies between RuAlO/ interface, which would lead to good electrical and mechanical reliabilities of atomic layer deposited RuAlO diffusion barrier for advanced Cu interconnects.
 Keywords
Cu interconnect;ALD;RuAlO;4-point bending test;interfacial adhesion energy;
 Language
Korean
 Cited by
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