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Effect of Ti Buffer Layer Thickness on the Electrical and Optical Properties of In2O3/Ti bi-layered Films
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 Title & Authors
Effect of Ti Buffer Layer Thickness on the Electrical and Optical Properties of In2O3/Ti bi-layered Films
Moon, Hyun-Joo; Jeon, Jae-Hyun; Gong, Tae-Kyung; Kim, Daeil;
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 Abstract
bi-layered films were deposited on glass substrate at room temperature with radio frequency (RF) and direct current (DC) magnetron sputtering to consider the effect of Ti buffer layer on the electrical and optical properties. In a comparison of figure of merit, 90 nm/Ti 10 nm thin films show the higher opto-electrical performance of than that of the single layer films (). From the observed results, it is supposed that the 10 nm bi-layered films may be an alternative candidate for transparent electrode in a transparent thin film transistor device.
 Keywords
;Ti;Magnetron sputtering;Surface roughness;Figure of merit;
 Language
Korean
 Cited by
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