JOURNAL BROWSE
Search
Advanced SearchSearch Tips
Fault Analysis of Semiconductor Device
facebook(new window)  Pirnt(new window) E-mail(new window) Excel Download
  • Journal title : Journal of Energy Engineering
  • Volume 25, Issue 1,  2016, pp.192-197
  • Publisher : The Korea Society for Energy Engineering
  • DOI : 10.5855/ENERGY.2015.25.1.192
 Title & Authors
Fault Analysis of Semiconductor Device
Park, S.J.; Choi, S.B.; Oh, C.S.;
  PDF(new window)
 Abstract
We have surveyed on technical method of fault analysis of semiconductor device. Fault analysis of semiconductor should first be found the places of fault spots. For this process they are generally used the testers; EB(emission beam tester), EM(emission microscope), OBIRCH(optical beam induced resistance change method) and LVP(laser voltage probing) etc. Therefore we have described about physical interpretation and technical method in using scanning electron microscope, transmission electron microscope, focused ion beam tester and Nano prober.
 Keywords
semiconductor device;fault analysis of semiconductor;SEM;TEM;FIB;
 Language
Korean
 Cited by
 References
1.
Y. Mitsui etc. Ext. Abst. IEDM, (1988) 329-332

2.
K. Nikawa: IEICE Trans. Electron., vol.E85-C, 3 (2002),746-751

3.
Konno Takashi etc. "LSI Testing Symposium 2002 report" (2002), 189-194

4.
Konno Takashi etc. "LSI Testing Symposium 2003 report" (2002), 61-66

5.
Hatano Masakastu etc. "LSI Testing Symposium 2004 report" (2004) 335-340

6.
Sikai Tetsya etc. "LSI Testing Symposium 2004 report" (2004), 341-345

7.
Mizuno Takashi etc. "LSI Testing Symposium 2004 report" (2004) 359-362

8.
Konno Takashi etc. "LSI Testing Symposium 2003 report" (2004), 147-152