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Effect of Brush Treatment and Brush Contact Sequence on Cross Contaminated Defects during CMP in-situ Cleaning
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  • Journal title : Tribology and Lubricants
  • Volume 31, Issue 6,  2015, pp.239-244
  • Publisher : The Korean Society of Tribologists and Lubrication Engineers
  • DOI : 10.9725/kstle.2015.31.6.239
 Title & Authors
Effect of Brush Treatment and Brush Contact Sequence on Cross Contaminated Defects during CMP in-situ Cleaning
Kim, Hong Jin;
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 Abstract
Chemical mechanical polishing (CMP) is one of the most important processes for enabling sub-14 nm semiconductor manufacturing. Moreover, post-CMP defect control is a key process parameter for the purpose of yield enhancement and device reliability. Due to the complexity of device with sub-14 nm node structure, CMP-induced defects need to be fixed in the CMP in-situ cleaning module instead of during post ex-situ wet cleaning. Therefore, post-CMP in-situ cleaning optimization and cleaning efficiency improvement play a pivotal role in post-CMP defect control. CMP in-situ cleaning module normally consists of megasonic and brush scrubber processes. And there has been an increasing effort for the optimization of cleaning chemistry and brush scrubber cleaning in the CMP cleaning module. Although there have been many studies conducted on improving particle removal efficiency by brush cleaning, these studies do not consider the effects of brush contamination. Depending on the process condition and brush condition, brush cross contamination effects significantly influence post-CMP cleaning defects. This study investigates brush cross contamination effects in the CMP in-situ cleaning module by conducting experiments using 300mm tetraethyl orthosilicate (TEOS) blanket wafers. This study also explores brush pre-treatment in the CMP tool and proposes recipe effects, and critical process parameters for optimized CMP in-situ cleaning process through experimental results.
 Keywords
CMP;defect;post CMP cleaning;brush scrubber cleaning;process optimization;
 Language
English
 Cited by
1.
CMP 후 세정용 PVA 브러쉬의 접촉압력 분포 측정,유선중;김덕중;

반도체디스플레이기술학회지, 2016. vol.15. 4, pp.73-78
 References
1.
Kim, H. J., Lee, T. H., Qin, L., Kashyap, S. “Challenges in post CMP in-situ cleaning for sub-14 nm device yield enhancement”, Proc. International Conference on Planarization/CMP Technology, pp. 230-233, 2015.

2.
Ee*, Y. C., Tan, S. K., Chee, C. S., Tan, J. B., Zhang, B. C., Siew, Y. K., Tan, P. K., Zhang, F., Lai, K. H., Chettiar, M. S., Wang, X. B. Thomas Fu and L. C. Hsia, “65 nm yield detractor caused by M1 filament shorts and solution”, Publications, PDF Solution (https://www.pdf.com/publications).

3.
Lariviere, S., Picore, F., Saez, P. L., Baltzinger, J.-L. Delahaye, B., Matha, J., Gilhard, X., D'Oliveira, S., Lagarde, J. M., Prebot, J. L., Merlot, F., Nogueira, F., Petit, D., Williams, S., Besade, E., "Electro-static Induced Metal Breakdown at Interlayer Dielectric Post CMP Brush Clean Process", Advanced Semiconductor Manufacturing Conference, Berlin, Germany, May 2009.

4.
Kwark, H., Yang, W.-Y., Sung, I.-H. “Slurry particle behavior inside pad pore during chemical mechanical polishing”, J. Korean Soc. Tribol. Lubr. Eng., Vol. 28, No. 1, pp. 7-11, 2012.

5.
Steigerwald, J. M., Murarka, S. P., Gutmann, R. J. Chemical Mechanical Planarization of Microelectronic Materials, pp.48-126, John Wiley & Sons, Inc., USA, 1997. (ISBN 0-471-13827-4)

6.
Kim, H. J., Bohra, G., Yang, H., Ahn, S.-G., Qin, L., Koli, D., “Study of the cross contamination effect on post CMP in-situ cleaning process”, Microelec. Engi,. Vol. 136, No. 25, pp. 36-41, 2015. crossref(new window)

7.
Xu, K., Vos, R., Vereecke, G., Doumen, G., Fyen, W., Mertens, P. W., Heyns, M. M., Vinckier, C., Fransaer, J., “Particle Adhesion and Removal Mechanism during Brush Scrubber Cleaning”, J. Vac. Sci. Technol., B Vol. 17, 2284, 1999. crossref(new window)

8.
Xu, K., Vos, R., Vereecke, G., Doumen, G., Fyen, W., Mertens, P. W., Heyns, M. M., Vinckier, C., Fransaer, J., Kovacs, F., “Fundamental Study of the Removal Mechanisms of Nano-sized Particles Using Brush Scrubber Cleaning”, J. Vac. Sci. Technol., B, Vol. 23, No. 5, pp. 2160-2175, 2005. crossref(new window)

9.
Qi, Z., Lu, W., Lee, W., “A Novel Design of Brush Scrubbing in Post-CMP Cleaning”, Inter. J Machine Tools & Manuf., Vol. 85, pp. 30-35, 2014. crossref(new window)

10.
Busnaina, A. A., Lin, H., Moumen, N., Feng, J.-W., Taylor, J. “Particle Adhesion and Removal Mechanism in Post-CMP Cleaning Process”, IEEE Trans. Semi. Manuf., Vol. 15, No. 4, pp. 374-382, 2002. crossref(new window)

11.
E-Eli, Y., Starosvetsky, D., “Review on Copper Chemical-Mechanical Polishing (CMP) and Post-CMP Cleaning in Ultra Large System Integrated (ULSI)-An Electrochemical Perspective”, Electroch. Acta, Vol. 52, pp. 1825-1838, 2007. crossref(new window)

12.
Sun, T., Zhuang, Y., Li, W., Philipossian, A., “Investigation of Eccentric PVA Brush Behaviors in Post-Cu CMP Cleaning”, Microelec. Engi., Vol. 100, pp. 20-24, 2012. crossref(new window)