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The Effect of Pressure and Platen Speed on the Material Removal Rate of Sapphire Wafer in the CMP Process
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  • Journal title : Tribology and Lubricants
  • Volume 32, Issue 2,  2016, pp.67-71
  • Publisher : The Korean Society of Tribologists and Lubrication Engineers
  • DOI : 10.9725/kstle.2016.32.2.67
 Title & Authors
The Effect of Pressure and Platen Speed on the Material Removal Rate of Sapphire Wafer in the CMP Process
Park, Sanghyun; An, Bumsang; Lee, Jongchan;
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This study investigates the characteristics of the sapphire wafer chemical mechanical polishing (CMP) process. The material removal rate is one of the most important factors since it has a significant impact on the production efficiency of a sapphire wafer. Some of the factors affecting the material removal rate include the pressure, platen speed and slurry. Among the factors affecting the CMP process, we analyzed the trends in the material removal rate and surface roughness, which are mechanical factors corresponding to both the pressure and platen speed, were analyzed. We also analyzed the increase in the material removal rate, which is proportional to the pressure and platen speed, using the Preston equation. In the experiment, after polishing a 4-inch sapphire wafer with increasing pressure and platen speed, we confirmed the material removal rate via thickness measurements. Further, surface roughness measurements of the sapphire wafer were performed using atomic force microscopy (AFM) equipment. Using the measurement results, we analyzed the trends in the surface roughness with the increase in material removal rate. In addition, the experimental results, confirmed that the material removal rate increases in proportion to the pressure and platen speed. However, the results showed no association between the material removal rate and surface roughness. The surface roughness after the CMP process showed a largely consistent trend. This study demonstrates the possibility to improve the production efficiency of sapphire wafer while maintaining stable quality via mechanical factors associated with the CMP process.
polishing;roughness;material removal rate;sapphire wafer;
 Cited by
T.-S. Kwak, T.-S. Han, M.-W. Jung, Y.J. Kim, Yosihiro Uehara, Hitoshi Ohmori, “A Study on Characteristics of ELID Lapping for Sapphire Wafer Material”, Journal of the Korean Society for Precision Engineering, Vol. 29, No. 12, pp. 1285-1289, 2012. crossref(new window)

C. J. Park, H. J. Kim, D. Y. Kim, T. K. Lee, M. H. Jeon, “Study on the Effect of Dilution Ratio of Slurry on the Roughness and Removal Rate in Sapphire CMP”, Journal of KSPE, pp. 145-146, 2012.

Chan Hong Chung, “Mixed Nano Silica Colloidal Slurry for Reliability Improvement of Sapphire Wafer CMP Process”, Journal of Applied Reliability, Vol. 14, No. 1, pp. 11-19, 2014.

Preston, F. W., “The Theory and Design of Plate Glass Polishing Machines”, Journal Society of Glass Tech, pp. 214-256, 1927.

Cook, L. M., J. Non-cryst. Solids, Vol. 120, pp. 152, 1990. crossref(new window)

C. J. Park, H. D. Jeong, H. J. Kim, D. Y. Kim, “A Study on Ultra-high Pressure CMP for LED Sapphire Substrate”, Journal of KSPE, pp. 1211-1212, 2014.