Publisher : The Korean Institute of Surface Engineering
DOI : 10.5695/JKISE.2007.40.6.258
Title & Authors
Growth Characteristics of SnO2 Thin Film for Gas Sensor with Annealing Treatment Kang, Kae-Myung; Choi, Jong-Un;
Relationships between the electrical resistivity and the growth characteristic of thin films were investigated. thin films with thickness from 64 nm to 91 nm were made by controlling the RF deposition energy from 80 to 150 W. These thin films were annealed at temperature range of interval in the gas condition. After annealing treatments, the microstructures of the thin films were changed mixed structure(amorphous & crystalline) to lamina columnar crystalline structure. Both the film thickness and the grain size were increased with increasing the local crystallization of microstructure of thin films by annealing treatment. Their electrical resistivity increased up to the annealing temperature of , and then slowly decreased.
Tin dioxide;Annealing;Electrical resistivity;Grain size;