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Growth Characteristics of SnO2 Thin Film for Gas Sensor with Annealing Treatment
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 Title & Authors
Growth Characteristics of SnO2 Thin Film for Gas Sensor with Annealing Treatment
Kang, Kae-Myung; Choi, Jong-Un;
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 Abstract
Relationships between the electrical resistivity and the growth characteristic of thin films were investigated. thin films with thickness from 64 nm to 91 nm were made by controlling the RF deposition energy from 80 to 150 W. These thin films were annealed at temperature range of interval in the gas condition. After annealing treatments, the microstructures of the thin films were changed mixed structure(amorphous & crystalline) to lamina columnar crystalline structure. Both the film thickness and the grain size were increased with increasing the local crystallization of microstructure of thin films by annealing treatment. Their electrical resistivity increased up to the annealing temperature of , and then slowly decreased.
 Keywords
Tin dioxide[];Annealing;Electrical resistivity;Grain size;
 Language
Korean
 Cited by
1.
SnO2:Cu 나노 구조물의 CH4, CH3CH2CH3 가스 감응 특성,이지영;유윤식;유일;

한국전기전자재료학회논문지, 2012. vol.25. 12, pp.974-978 crossref(new window)
1.
Gas Sensing Behaviors of SnO2:Cu Nanostructures for CH4, CH3CH2CH3Gas, Journal of the Korean Institute of Electrical and Electronic Material Engineers, 2012, 25, 12, 974  crossref(new windwow)
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