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Deposition of c-BN Films on Tungsten Carbide Insert Tool by Microwave Plasma Enhanced Chemical Vapor Deposition(MPECVD)
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 Title & Authors
Deposition of c-BN Films on Tungsten Carbide Insert Tool by Microwave Plasma Enhanced Chemical Vapor Deposition(MPECVD)
Yoon, Su-Jong; Kim, Tae-Gyu;
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 Abstract
Cubic boron nitride(c-BN) films were deposited on tungsten carbide insert tool by microwave plasma enhanced chemical vapor deposition(MPECVD) from a gas mixture of triethyl borate, ammonia , hydrogen and argon(Ar). The qualities of deposited thin film were investigated by x-ray diffrac-tion(XRD), field emission scanning electron microscopy(FE-SEM) and micro Raman spectroscope. The surface morphologies of the synthesised BN as well as crystallinity appear to be highly dependent on the flow rate of and gases. The deposited film had more crystallized phases with 5 scem of and gases than with 2 sccm, and the phase was identified as c-BN by micro Raman spectroscope and XRD. The adhesion strength were also increased with increasing flow rates of and gases.
 Keywords
Insert Tool;c-BN Film;MPECVD(Microwave Plasma Enhanced Chemical Vapor Deposition);Thiethyl Borate;Adhesion;
 Language
Korean
 Cited by
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