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Characterization of Ga, Al or In Doped ZnO Films Deposited by DC Magnetron Sputtering
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 Title & Authors
Characterization of Ga, Al or In Doped ZnO Films Deposited by DC Magnetron Sputtering
Park, Sang-Eun; Park, Se-Hun; Jie, Lue; Song, Pung-Keun;
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 Abstract
Trivalent ions(Ga, Al, In) doped ZnO films were deposited by DC magnetron sputtering on non-alkali glass substrate at substrate temperature of . We used the different three types of high density() ceramic sintered disks(doped with ; 6.65 wt%, ; 3.0 wt%, ; 9.54 wt%). This study examined the effect of different dopants(Ga, Al, In) on the electrical, structural, and optical properties of the films. The lowest resistivity of and the highest optical band gap of 3.74 eV were obtained by Ga doped ZnO(GZO) film. All the films had a preferred orientation along the(002) direction, indicating that the growth orientation has a c-axis perpendicular to the substrate surface. The average transmittance of the films was more than 85% in the visible range.
 Keywords
TCO;AZO;GZO;ZIO;Magnetron sputtering;Zinc oxide;Ionic radius;
 Language
Korean
 Cited by
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