JOURNAL BROWSE
Search
Advanced SearchSearch Tips
TiN Coatings by Reactive Magnetron Sputtering Under Various Substrate Bias Voltages
facebook(new window)  Pirnt(new window) E-mail(new window) Excel Download
 Title & Authors
TiN Coatings by Reactive Magnetron Sputtering Under Various Substrate Bias Voltages
Seo, Pyong-Sup; Chun, Sung-Yong;
  PDF(new window)
 Abstract
Reactively magnetron sputtered TiN films were deposited on Si wafers under varying bias voltage and characterized by X-ray diffraction, field-emission scanning electron microscopy and Nanoindentation. The films deposited under an Ar + atmosphere exhibited a mixed (200)-(111) orientation with a strong (200) texture, which subsequently changed to a strong (111) texture with increasing bias voltage. The changes in texture and grain size of the TiN thin films are due to one or a combination of factors such as strain energy, surface free energy, surface diffusivity and adatom mobility. The influence of each factor depends on the processing conditions. The average deposition rate and grain size were calculated from FE-SEM images of the films indicating that the deposition rate was lower at the films deposited under bias voltage.
 Keywords
Reactive magnetron sputtering;TiN coating;Substrate bias;Microstructure;
 Language
Korean
 Cited by
1.
유도결합 플라즈마 파워변화에 따른 초경도 나노결정질 TiN 코팅막의 물성변화,전성용;

한국세라믹학회지 , 2013. vol.50. 3, pp.212-217 crossref(new window)
1.
Properties of AlTiN Films Deposited by Cathodic Arc Deposition, Journal of the Korean institute of surface engineering, 2016, 49, 3, 307  crossref(new windwow)
2.
Effect of Inductively Coupled Plasma (ICP) Power on the Properties of Ultra Hard Nanocrystalline TiN Coatings, Journal of the Korean Ceramic Society, 2013, 50, 3, 212  crossref(new windwow)
 References
1.
C. H. Ma, J. H. Huang, H. Chen, Surf. Coat. Tech., 200 (2006) 3868 crossref(new window)

2.
L. W. Ma, J. M. Cairney, Hoffman, P. R. Monroe, Thin Solid Films, 515 (2007) 3190 crossref(new window)

3.
C. S. Shin, D. Gall, N. Hellgren, J. Patscheider, I. Petrov, J.E. Greene, J. Appl. Phys., 93(10) (2003) 6025 crossref(new window)

4.
M. K. Lee, H. S. Kang, W. W. Kim, J. S. Kim, W. J. Lee, J. Mater. Res., 12(9) (1997) 2393 crossref(new window)

5.
I. Petrov, P. B. Barna, L. Hultman, J. E. Greene, J. Vac. Sci. Tech., 21 (2003) S117 crossref(new window)

6.
S. Y. Chun, J. Kor. Phys. Soc., 52 (2008) 1227 crossref(new window)

7.
I. Safi, Surf. Coat. Tech., 203 (2000) 127

8.
M. K. Lee, W. W. Kim, S. J. Kim. C. K. Lee, Y. S. Kim, J. Kor. Inst. Surf. Eng., 33 (2000) 2

9.
P. H. Mayrhofer, F. Kunc, J. Musil, C. Mitterer, Thin Solid Films, 151 (2002) 415

10.
R. Chandra, A. K. Chawla, D. Kaur, P. Ayyub, Nanotechnology, 3053 (2005) 16

11.
P. J. Kelly, T. Braucke, Z. Liu, R. D. Arnell, E. D. Doyle, Surf. Coat. Tech., 774 (2007) 202

12.
J. R. Roth, Industrial Plasma Engineering, Institute of Physics and Publishing, London (2001) 401-402

13.
M. Ohring, Materials Science of Thin Films, Academic Press, New York (2002) 614

14.
M. Sugawara, Plasma Etching, Oxford University Press, New York (1998) 185-186