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TiN Coatings by Reactive Magnetron Sputtering Under Various Substrate Bias Voltages
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 Title & Authors
TiN Coatings by Reactive Magnetron Sputtering Under Various Substrate Bias Voltages
Seo, Pyong-Sup; Chun, Sung-Yong;
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Reactively magnetron sputtered TiN films were deposited on Si wafers under varying bias voltage and characterized by X-ray diffraction, field-emission scanning electron microscopy and Nanoindentation. The films deposited under an Ar + atmosphere exhibited a mixed (200)-(111) orientation with a strong (200) texture, which subsequently changed to a strong (111) texture with increasing bias voltage. The changes in texture and grain size of the TiN thin films are due to one or a combination of factors such as strain energy, surface free energy, surface diffusivity and adatom mobility. The influence of each factor depends on the processing conditions. The average deposition rate and grain size were calculated from FE-SEM images of the films indicating that the deposition rate was lower at the films deposited under bias voltage.
Reactive magnetron sputtering;TiN coating;Substrate bias;Microstructure;
 Cited by
유도결합 플라즈마 파워변화에 따른 초경도 나노결정질 TiN 코팅막의 물성변화,전성용;

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