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Electrical and Structural Properties of GAZO Films Deposited by DC Magnetron Co-sputtering System with Two Cathodes
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 Title & Authors
Electrical and Structural Properties of GAZO Films Deposited by DC Magnetron Co-sputtering System with Two Cathodes
Jie, Luo; Park, Se-Hun; Song, Pung-Keun;
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Ga/Al doped ZnO (GAZO) thin films were prepared on non-alkali glass substrate by co-sputtering system using two DC cathodes equipped with AZO (:2.0 wt%) target and GZO (:6.65 wt%) target. This study examined the influence of Al/Ga concentration and substrate temperature on the electrical, structural and optical properties of GAZO films. The lowest resistivity was obtained at room temperature. With increasing substrate temperature, resistivity of GAZO film decreased to a minimum value of at below . Furthermore, when 0.05% gas was introduced, resistivity of GAZO film decreased to . All the films had a preferred orientation along the (002) direction, indicating that the deposited films have hexagonal wurtzite structure formed by the textured growth along the c-axis. The average transmittance of the films was more than 85% in the visible light range.
Al doped ZnO;Ga doped ZnO;Ga/Al co-doped ZnO;Co-sputtering;
 Cited by
DC 마그네트론 스퍼터링법에 의한 대면적 투명전도성 ZnO(Al)와 ZnO(AlGa) 박막제조 및 물리적 특성 연구,손영호;최승훈;박중진;정명효;허영준;김인수;

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