JOURNAL BROWSE
Search
Advanced SearchSearch Tips
Dry Etch Characteristics of TiN Thin Film for Metal Gate Electrode
facebook(new window)  Pirnt(new window) E-mail(new window) Excel Download
 Title & Authors
Dry Etch Characteristics of TiN Thin Film for Metal Gate Electrode
Um, Doo-Seung; Woo, Jong-Chang; Park, Jung-Soo; Kim, Chang-Il;
  PDF(new window)
 Abstract
We investigated the dry-etching mechanism of the TiN thin film using a /Ar inductively coupled plasma system. To understand the effect of the /Ar gas mixing ratio, we etched the TiN thin film by varying /Ar gas mixing ratio. When the gas mixing ratio was 100% , the highest etch rate was obtained. The chemical reaction on the surface was investigated with X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to examine etched profiles of the TiN thin film.
 Keywords
Etching;TiN;Plasma;ICP;/Ar;
 Language
Korean
 Cited by
 References
1.
M. Wittmer, Appl. Phys. Lett., 35 (1980) 456

2.
S. Ikeda, J. Palleau, J. Torres, B. Chenevier, N. Bourhila, R. Madar, J. Appl. Phys., 86 (1999) 2300 crossref(new window)

3.
J. E. Sundgren, Thin Solid Films, 128 (1985) 21 crossref(new window)

4.
H. K. Chiu, T. L. Lin, Y. Hu, K. C. Leou, H. C. Lin, M. S. Tasi, T. Y. Huang, J. Vac. Sci. Technol, A, 19(2) (2001) 445

5.
K. E. Elers, V. Saanila, P. J. Soininen, W. M. Li, J. T. Kostamo, S. Haukka, J. Juhannoja, W. F. A. Besling, Chem. Vap. Deposition, 8(4) (2002) 149 crossref(new window)

6.
J. Tonotani, T. Iwamoto, F. Sato, K. Hattori, S. Ohmi, H. Iwai, J. Vac. Sci. Technol. B, 21(5) (2003) 2163 crossref(new window)

7.
S. K. Rha, W. J. Lee, S. Y. Lee, Y. S. Hwang, Y. J. Lee, D. I. Kim, D. W. Kim, S. S. Chun, C. O. Park, Thin Solid Films, 320 (1998) 134 crossref(new window)

8.
H. Kim, C. Cabral, Jr., C. Lavoie, S. M. Rossnagel, J. Vac. Sci. Technol. B, 20(4) (2002) 1321 crossref(new window)

9.
K. Nakamura, T. Kitagawa, K. Osari, K. Takahashi, K. Ono, Vacuum, 80 (2006) 761 crossref(new window)

10.
J. W. Coburn, H. F. Winters, J. Vac. Sci. Technol., 16(2) (1979) 391 crossref(new window)

11.
W. S. Hwang, J. Chen, W. J. Yoo, V. Bliznetsov, J. Vac. Sci. Technol. A, 23(4) (2005) 964 crossref(new window)

12.
N. K. Min, M. Kim, K. H. Kwon, A. Efremov, H. W. Lee, S. Kim, J. Korean Phys. Soc., 51(5) (2007) 1686 crossref(new window)

13.
M. H. Shin, S. W. Na, N. E. Lee, J. H. Ahn, Thin Solid Films, 506-507 (2006) 230 crossref(new window)

14.
A. L. Gouil, O. Joubert, G. Cunge, T. Chevolleau, L. Vallier, B. Chenevier, I. Matko, J. Vac. Sci. Technol. B, 25(3) (2007) 767 crossref(new window)