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The Study of the Etch Characteristics of the TaN Thin Film Using an Inductively Coupled Plasma
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 Title & Authors
The Study of the Etch Characteristics of the TaN Thin Film Using an Inductively Coupled Plasma
Um, Doo-Seung; Kim, Seung-Han; Woo, Jong-Chang; Kim, Chang-Il;
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In this study, the plasma etching of the TaN thin film with /Ar gas chemistries was investigated. The equipment for the etching was an inductively coupled plasma (ICP) system. The etch rate of the TaN thin film and the selectivity of TaN to and PR was studied as a function of the process parameters, including the amount of added, an RF power, a DC-bias voltage and the process pressure. When the gas mixing ratio was (3 sccm)/(6 sccm)/Ar(14 sccm), with the other conditions fixed, the highest etch rate was obtained. As the RF power and the dc-bias voltage were increased, the etch rate of the TaN thin film was increased. X-ray photoelectron spectroscopy (XPS) was used to investigate the chemical states of the surface of the TaN thin film.
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