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Temperature effect on Dry Etching of ZrO2 in Cl2/BCl3/Ar Plasma
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 Title & Authors
Temperature effect on Dry Etching of ZrO2 in Cl2/BCl3/Ar Plasma
Yang, Xue; Ha, Tae-Kyung; Wi, Jae-Hyung; Um, Doo-Seung; Kim, Chang-Il;
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The wafer surface temperature is an important parameter in the etching process which influences the reaction probabilities of incident species, the vapor pressure of etch products, and the re-deposition of reaction products on feature surfaces. In this study, we investigated all of the effects of substrate temperature on the etch rate of thin film and selectivity of thin film over thin film in inductively coupled plasma as functions of addition in /Ar plasma, RF power and dc-bias voltage based on the substrate temperature in range of to . The elements on the surface were analyzed by x-ray photoelectron spectroscopy (XPS).
 Cited by
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