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Effect of H2 Addition on the Properties of Transparent Conducting Oxide Films Deposited by Co-sputtering of ITO and AZO
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 Title & Authors
Effect of H2 Addition on the Properties of Transparent Conducting Oxide Films Deposited by Co-sputtering of ITO and AZO
Kim, Hye-Ri; Kim, Dong-Ho; Lee, Sung-Hun; Lee, Gun-Hwan;
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 Abstract
Multicomponent transparent conducting oxide films were deposited on glass substrates at 150 by dual magnetron sputtering of AZO and ITO targets. In the case of mixing a limited amount of ITO (10W), resistivity of TCO films was significantly increased compared to the AZO film; from to . Deterioration of the electrical conductivity is attributed to the decreases in carrier concentration and Hall mobility. Improvement of the conductivity could be obtained for the films prepared with ITO powers larger than 40 W. The lowest resistivity () of was achieved when ITO power was 100 W. Effects of incorporation on the electrical and optical properties of AZO-ITO films were investigated in this work. Addition of small amount of hydrogen resulted in the increase of carrier concentration and the improvement of electrical conductivity. It is apparent that the roughness of AZO-ITO films decreases dramatically after the transition of microstructure from polycrystalline to amorphous phase, which gives practical advantages such as an excellent uniformity of surface and a high etching rate. AZO-ITO films grown at sputtering ambient with hydrogen gas are expected to be applicable to optoelectronic devices such as organic light emitting diodes and flexible displays due to their sufficient electrical and structural properties.
 Keywords
Transparent conducting oxide;Indium tin oxide;Aluminum zinc oxide;Hydrogen;Electrical transport properties;
 Language
Korean
 Cited by
1.
ITO 투명 전극 소재 기술 동향,이건환;이성훈;윤정흠;김동호;

인포메이션 디스플레이, 2010. vol.11. 5, pp.17-22
 References
1.
T. Minami, H. Sonohara, T. Kakumu, S. Takata, Thin Solid Films, 270 (1995) 37 crossref(new window)

2.
H. Morikawa, M. Fujita, Thin Solid Films, 339 (1999) 309 crossref(new window)

3.
Y. Weifeng, L. Zhuguang, P. Dong-Liang, F. Zhang, H. Huolin, X. Yannan, W. Zhengyun, Appl. Surf. Sci., 255 (2009) 5669 crossref(new window)

4.
V. Assuncao, E. Fortunato, A. Marques, H. Aguas, I. Ferreria, M. E. V. Costa, R. Martins, Thin Solid Films, 427 (2003) 401 crossref(new window)

5.
Luo Jie, 박세훈, 송풍근, 한국표면공학회지, 42 (2009) 122

6.
H. C. Weller, R. H. Mauch, G. H. Bauer, Sol. Energy Mater. Sol. Cells, 27 (1992) 217 crossref(new window)

7.
S. Y. Myong, K. S. Lim, Appl. Phys. Lett., 82 (2003) 3026 crossref(new window)

8.
T. Minami, T. Kakumu, Y. Takeda, S. Takaya, Thin Solid Films, 317 (1998) 326 crossref(new window)

9.
김동호, 김혜리, 이성훈, 변응선, 이건환, 한국표면공학회지, 42 (2009) 128

10.
D.-S. Liu, C.-H. Lin, B.-W. Huang, C.-C. Wu, Jpn. J. Appl. Phys., 45 (2006) 3526 crossref(new window)

11.
T. Minami, T. Kakumu, Y. Takeda, S. Takaya, Thin Solid Films, 317 (1998) 318 crossref(new window)

12.
H. Hosono, J. Non-Cryst. Solids, 352 (2006) 851 crossref(new window)

13.
X. T. Hao, F. R. Zhu, K. S. Ong, L. W. Tan, Semicond. Sci. Technol., 21 (2006) 48 crossref(new window)

14.
C. G. Van de Walle, Phys. Rev. Lett., 85 (2000) 1012 crossref(new window)

15.
Q.-B. Ma, Z.-Z. Ye, H.-P. He, S.-H. Hu, J.-R. Wang, L.-P. Zhu, Y.-Z. Zhang, B.-H. Zhao, J. Crystal. Growth, 304 (2007) 64 crossref(new window)

16.
C. G. Van de Walle, J. Neugebauer, Letter to Nature, 423 (2003) 626 crossref(new window)

17.
I. Hamberg, C. G. Granqvist, J. Appl. Phys., 60 (1986) 123 crossref(new window)