Advanced SearchSearch Tips
Two-step Electroless Plated Pt Ohmic Contacts to p-type InGaAs
facebook(new window)  Pirnt(new window) E-mail(new window) Excel Download
 Title & Authors
Two-step Electroless Plated Pt Ohmic Contacts to p-type InGaAs
Im, Hung-Su; Wang, Kai; Kim, Geun-Woo; Chang, Ji-Ho; Koo, Bon-Heun;
  PDF(new window)
This work discusses a two-step electroless plating method for preparing a Pt thin film on p-type InGaAs substrate, which is defined as Pt I and Pt II. A thin Pt catalytic layer formed in Pt I bath on the substrate at . In the following Pt II bath, thick Pt films then easily grew on the sensitized layer on InGaAs previously formed in the Pt I bath. The growth of Pt film is strongly influenced by the plating temperature and pH value. To study the plating time effect, the plating of Pt II bath is 5 to 40 min at after using Pt I bath at 50~ for 5min of pH 8~13. Pt film for ohmic contact to p-type InGaAs was successfully prepared by using the two-step Pt electroless plating.
Pt film;p-type InGaAs;CTLM;Ohmic contact;Two-step electroless plating;
 Cited by
G. O. Mallory, J. B. Hajdu, Electroless Plating: Fundamentals and Applications, American Electroplaters and Surface Finishers Society. Chapter 12, pp. 289-329, William Andrew Publishing/Noyes, Brick, New Jersey (1990).

L. Lewis, D. P. Casey, A. V. Jeyaseelan, J. F. Rohan, P. P. Maaskant, Appl. Phys. Lett., 92 (2008) 62113. crossref(new window)

D. Lamouche, J. R. Martin, P. Clechet, G. Haroutiounian, J. P. Sandino, Solid-state Electro., 29(6) (1986) 625. crossref(new window)

H. Im, Y. J. Seo, Y. J. Kim, K. Wang, S. S. Byeon, B. H. Koo, J. H. Chang, J. Kor. Inst. Surf. Eng. 42(4) (2009) 1. crossref(new window)

H.-I. Chen, C.-K. Hsiung, Y.-I. Chou, Semicond. Sci. Technol. 18 (2003) 620. crossref(new window)

J. Fritz, B. E. Hammons, A. J. Howard, T. M. Brennan, J. A. Olsen, Appl. Phys. Lett. 62 (1993) 919. crossref(new window)

R. D. Briggs, A. J. Howard, A. G. Baca, M. J. Haffeh, G. A. Vawter, Thin Solid Films, 290-291 (1996) 508. crossref(new window)

M. Murakami, Mater. Sci. Rep. 5(4) (1990) 273. crossref(new window)

G. Stremsdoerfer, J. R. Martin, P. Clechet, J. Electrochem. Soc. 127(1) (1990) 256.

T. Ohshima, R. Shigemasa, M. Sato, M. Tsunotani, T. Kimura, Solid-state Electron. 43 (1999) 1519. crossref(new window)

E. M. Lysczek, S. E. Mohney, J. Electrochem. Soc. 155(10) (2008) 699. crossref(new window)