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Properties of Indium Doped Zinc Oxide Thin Films Deposited by RF Magnetron Sputtering
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 Title & Authors
Properties of Indium Doped Zinc Oxide Thin Films Deposited by RF Magnetron Sputtering
Bang, Joon-Ho; Park, Se-Hun; Cho, Sang-Hyun; Song, Pung-Keun;
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Indium doped zinc oxide films (ZIO) were deposited on non-alkali glass substrates by radio frequency (RF) magnetron sputtering at room temperature. The structural, electrical and optical properties of the ZIO films were investigated as a function of their content (3.33-15.22 wt%). The ZIO films deposited with an content of 9.54 wt% showed a relatively low resistivity of and a highly c-axis preferred orientation. The grain size and FWHM were mainly affected by the content. The crystallinity and resistivity were enhanced with increasing grain size. The average transmittance of the ZIO films was over 85% in the visible region and their band gap varied from 3.22 to 3.66 eV depending on their doping ratio.
ZnO;ZIO;TCO;RF magnetron sputtering;
 Cited by
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