Publisher : The Korean Institute of Surface Engineering
DOI : 10.5695/JKISE.2011.44.2.039
Title & Authors
Surface and Structural Features of a-Si Thin Films Prepared by Various H2/H2+SiH4 Dilution Kwon, Jin-Up;
Amorphous silicon thin film was deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD). Each films were prepared in different dilution in the chamber gas. As a result, silicon crystallites and crystal volume fraction was increased with raising the hydrogen dilution in the gas and optical band gap was decreased. Increasement of the hydrogen contents in the chamber affected on surface roughness. In this study, thickness and surface roughness of the a-Si thin film by different hydrogen dilution was investigated by various techniques.
PE CVD;XRD;a-Si;Optical bandgap;AFM;
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