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Electrical and Optical Properties of Ga-doped SnO2 Thin Films Via Pulsed Laser Deposition
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 Title & Authors
Electrical and Optical Properties of Ga-doped SnO2 Thin Films Via Pulsed Laser Deposition
Sung, Chang-Hoon; Kim, Geun-Woo; Seo, Yong-Jun; Heo, Si-Nae; Huh, Seok-Hwan; Chang, Ji-Ho; Koo, Bon-Heun;
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 Abstract
doped thin films were grown by using pulsed laser deposition (PLD) technique on glass substrate. The optical and electrical properties of these films were investigated for different doping concentrations, oxygen partial pressures, substrate temperatures, and film thickness. The films were deposited at different substrate temperatures (room temperature to ). The best opto-electrical properties is shown by the film deposited at substrate temperature of with oxygen partial pressure of 80 m Torr and the gallium concentration of 2 wt%. The as obtained lowest resistivity is with the average transmission of 80% in the visible region and an optical band gap (indirect allowed) of 4.26 eV.
 Keywords
Transparent conducting oxide; thin films;Pulsed laser deposition;
 Language
English
 Cited by
 References
1.
T. Hitosugi, N. Yamada, N. L. H. Hoang, J. Kasai, S. Nakao, T. Shimada, T. Hasegawa, Thin Solid Films, 517 (2009) 3106. crossref(new window)

2.
H. Kim, A. Pique, J. S. Horwitz, H. Mattoussi, H. Murata, Z. H. Kafafi, D. B. Chrisey, Appl. Phys. Lett., 74 (1999) 3444. crossref(new window)

3.
O. K. Varghese, L. K. Malhotra, J. Appl. Phys., 87 (2000) 7457. crossref(new window)

4.
H. Kim, C. M. Gilmore, A. Pique, J. S. Horwitz, H. Mattoussi, H. Murata, Z. H. Kafafi, D. B. Chrisey, J. Appl. Phys., 86 (1999) 6451. crossref(new window)

5.
H. Kim, J. S. Horwitz, G. P. Kushto, Z. H. Kafafi, D. B. Chrisey, Appl. Phys. Lett., 79 (2001) 284. crossref(new window)

6.
K. Tonooka, T.-W. Chiu, N. Kikuchi, Appl. Surf. Sci., 255 (2009) 9695. crossref(new window)

7.
E. M. Kaidashev, M. Lorenz, H. Von Wenckstern, A. Rahm, H. C. Semmelhach, K. H. Han, G. Bennodorf, C. Bundesmann, H. Hochmuth, M. Grundamann, Appl. Phys. Lett., 82 (2003) 3901. crossref(new window)

8.
H. Kim, A. Pique, Appl. Phys., 84 (2004) 218.

9.
S. Shanthi, C. Subramanian, P. Ramasamy, J. Cryst. Growth, 197 (1999) 858. crossref(new window)

10.
S.-M. Park, T. Ikegami, K. Ebihara, P.-K. Shin, Appl. Surf. Sci., 253 (2006) 1522. crossref(new window)

11.
J. C. Manifacier, Thin Solid Films, 90 (1982) 297. crossref(new window)

12.
H.-L. Ma, X.-T. Hao, J. Ma, Y.-G. Yang, J. Huang, D.-H. Zhang, X. G. Xu, Appl. Surf. Sci., 191 (2002) 313. crossref(new window)

13.
C. Agashe, J. Hupkes, G. Schope, M. Berginski, Solar Energy Materials & Solar Cells, 93 (2009) 1256. crossref(new window)

14.
M. S. Anwar, S. Kumar, N. Archi, F. Ahmed, Y. J. Seo, C. G. Lee, B. H. Koo, Journal of Alloys and Compounds, 509 (2011) 4525. crossref(new window)