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High Temperature Durability Amorphous ITO:Yb Films Deposited by Magnetron Co-Sputtering
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 Title & Authors
High Temperature Durability Amorphous ITO:Yb Films Deposited by Magnetron Co-Sputtering
Jung, Tae Dong; Song, Pung Keun;
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Yb-doped ITO (ITO:Yb) films were deposited on unheated non-alkali glass substrates by magnetron cosputtering using two cathodes (DC, RF) equipped with the ITO and target, respectively. The composition of the ITO:Yb films was controlled by adjusting the RF powers from 0 W to 480 W in 120 W steps with the DC power fixed at 70 W. The ITO:Yb films had a higher crystallization temperature () than that of the ITO films (), which was attributed to both larger ionic radius of and higher bond enthalpy of , compared to ITO. This amorphous ITO:Yb film post-annealed at showed a resistivity of , indicating that a introduction of Yb increased resistivity of the ITO film. However, these amorphous ITO:Yb films showed a high etching rate, fine pattering property, and a very smooth surface morphology above the crystallization temperature of the amorphous ITO films (about ). The transmittance of all films was >80% in the visible region.
TCO;Yb-doped ITO;Amorphous ITO;Co-Sputtering;
 Cited by
RF 마그네트론 스퍼터링법으로 상온 증착된 비정질 ITZO 산화물의 전기적 및 광학적 특성,이기창;조광민;이준형;김정주;허영우;

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