Publisher : The Korean Institute of Surface Engineering
DOI : 10.5695/JKISE.2014.47.2.068
Title & Authors
A Study on the Seed Step-coverage Enhancement Process (SSEP) of High Aspect Ratio Through Silicon Via (TSV) Using Pd/Cu/PVP Colloids Lee, Dongryul; Lee, Yugin; Kim, Hyung-Jong; Lee, Min Hyung;
The seed step-coverage enhancement process (SSEP) using Pd/Cu/PVP colloids was investigated for the filling of through silicon via (TSV) without void. TEM analysis showed that the Pd/Cu nano-particles were well dispersed in aqueous solution with the average diameter of 6.18 nm. This Pd/Cu nano-particles were uniformly deposited on the substrate of Si//Ti wafer using electrophoresis with the high frequency Alternating Current (AC). After electroless Cu deposition on the substrate treated with Pd/Cu/PVP colloids, the adhesive property between deposited Cu layer and substrate was evaluated. The Cu deposit obtained by SSEP with Pd/Cu/PVP colloids showed superior adhesion property to that on Pd ion catalyst-treated substrate. Finally, by implementing the SSEP using Pd/Cu/PVP colloids, we achieved 700% improvement of step coverage of Cu seed layer compared to PVD process, resulting in void-free filling in high aspect ratio TSV.
Seed step-coverage enhancement process (SSEP);Pd/Cu/PVP colloids;Through silicon via (TSV);Electrophoresis;
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