Publisher : The Korean Institute of Surface Engineering
DOI : 10.5695/JKISE.2014.47.6.311
Title & Authors
Electrical Properties of ITO Thin Film Deposited by Reactive DC Magnetron Sputtering using Various Sn Concentration Target Kim, Min-Je; Jung, Jae-Heon; Song, Pung-Keun;
Indium tin oxide (ITO) thin films (30 nm) were deposited on PET substrate by reactive DC magnetron sputtering using In/Sn(2, 5 wt.%) metal alloy target without intentionally substrate heating during the deposition under different DC powers of 70 ~ 110 W. The electrical properties were estimated by Hall-effect measurements system. The resistivity of ITO thin film deposited using In/Sn (5 wt.%) metal alloy target at low DC power increased with increasing annealing time. However, they increased with increasing annealing time at high DC power. In the case of ITO (Sn 2 wt%), we can't find clear change in resistivity with increasing annealing time. However, carrier density and mobility showed difference behavior due to change of oxygen vacancy.
ITO;Reactive DC sputtering;Thin film;Post annealing;
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