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Effect of Electron Irradiation Energy on the Properties of GZO/SiO2 Thin Films on Polycarbonate
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 Title & Authors
Effect of Electron Irradiation Energy on the Properties of GZO/SiO2 Thin Films on Polycarbonate
Heo, Sung-Bo; Park, Min-Jae; Jung, Uoo-Chang; Kim, Dae-Il; Cha, Byung-Chul;
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 Abstract
Ga-doped ZnO (GZO) single layer and bi-layered films were deposited on Polycarbonate(PC) substrate by radio frequency magnetron sputtering. Influence of the structural, electrical, and optical properties of the films was considered. We have considered the influence of electron irradiation energy of 450 and 900 eV on the stuctural, electrical and optical properties of thin films. The optical transmittance in a visible wave length region increased with the electron irradiation energy. The electrical resistivity of the films were dependent on the electron's irradiation energy. The films irradiated at 900 eV were showen the lowest resistivity of . The film which was irradiated by electron at 900 eV shows 84.3% optical transmittance and also shows lower than contact angle of in this study.
 Keywords
GZO;E-beam Irradiation;;Buffer layer;Optical transmittance;
 Language
Korean
 Cited by
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