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Substrate Temperature Dependence of Microcrystalline Silicon Thin Films by Combinatorial CVD Deposition
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 Title & Authors
Substrate Temperature Dependence of Microcrystalline Silicon Thin Films by Combinatorial CVD Deposition
Kim, Yeonwon;
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 Abstract
A high-pressure depletion method using plasma chemical vapor deposition (CVD) is often used to deposit hydrogenated microcrystalline silicon () films of a low defect density at a high deposition rate. To understand proper deposition conditions of films for a high-pressure depletion method, Si films were deposited in a combinatorial way using a multi-hollow discharge plasma CVD method. In this paper the substrate temperature dependence of film properties are demonstrated. The higher substrate temperature brings about the higher deposition rate, and the process window of device quality films becomes wider until . This is attributed to competitive reactions between Si etching by H atoms and Si deposition.
 Keywords
Microrystalline silicon;Temperature dependence;Chemical vapor deposition;
 Language
English
 Cited by
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