Recently, -based alloys are the best thermoelectric materials near to room temperature, so it has been researched to achieve increased figure of merit(ZT). Ternary compounds such as Bi-Te-Se and Bi-Sb-Te have higher thermoelectric property than binary compound Bi-Te and Sb-Te, respectively. Compared to DC plating method, pulsed electrodeposition is able to control parameters including average current density, and on/off pulse time etc. Thereby the morphology and properties of the films can be improved. In this study, we electrodeposited n-type ternary Cu-doped thin film by modified pulse technique at room temperature. To further enhance thermoelectric properties of thin film, we optimized Cu doping concentration in thin film and correlated it to electrical and thermoelectric properties. Thus, the crystal, electrical, and thermoelectric properties of electrodeposited thin film were characterized the XRD, SEM, EDS, Seebeck measurement, and Hall effect measurement, respectively. As a result, the thermoelectric properties of Cu-doped thin films were observed that the Seebeck coefficient is and the power factor is at 10 mg of Cu weight. The power factor of Cu-doped thin film is 1.4 times higher than undoped thin film.

Electrodeposition;;modified Pulse electrodeposition;Cu;Doping;n-type thin film;

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