Publisher : The Korean Institute of Surface Engineering
DOI : 10.5695/JKISE.2016.49.3.301
Title & Authors
Nanotexturing and Post-Etching for Diamond Wire Sawn Multicrystalline Silicon Solar Cell Kim, Myeong-Hyun; Song, Jae-Won; Nam, Yoon-Ho; Kim, Dong-Hyung; Yu, Si-Young; Moon, Hwan-Gyun; Yoo, Bong-Young; Lee, Jung-Ho;
The effects of nanotexturing and post-etching on the reflection and quantum efficiency properties of diamond wire sawn (DWS) multicrystalline silicon (mc-Si) solar cell have been investigated. The chemical solutions, which are acidic etching solution (HF-), metal assisted chemical etching (MAC etch) solutions (-HF-DI, HF--DI) and post-etching solution (diluted KOH at ), were used for micro- and nano-texturing at the surface of diamond wire sawn (DWS) mc-Si wafer. Experiments were performed with various post-etching time conditions in order to determine the optimized etching condition for solar cell. The reflectance of mc-Si wafer texturing with acidic etching solution showed a very high reflectance value of about 30% (w/o anti-reflection coating), which indicates the insufficient light absorption for solar cell. The formation of nano-texture on the surface of mc-Si contributed to the enhancement of light absorption. Also, post-etching time condition of 240 s was found adequate to the nano-texturing of mc-Si due to its high external quantum efficiency of about 30% at short wavelengths and high short circuit current density () of .
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