JOURNAL BROWSE
Search
Advanced SearchSearch Tips
Analysis of Cutting Characteristic of the Sapphire Wafer Using a Internal Laser Scribing Process for LED Chip
facebook(new window)  Pirnt(new window) E-mail(new window) Excel Download
 Title & Authors
Analysis of Cutting Characteristic of the Sapphire Wafer Using a Internal Laser Scribing Process for LED Chip
Song, Ki-Hyeok; Cho, Yong-Kyu; Kim, Byung-Chan; Kang, Dong-Seong; Cho, Myeong-Woo; Kim, Jong-Su; Ryu, Byung-So;
  PDF(new window)
 Abstract
Scribing is cutting process to determine production amount and characteristic of LED chip. So it is an important process for fabrication of LED chip. Mechanical process and conventional scribing process with laser source has several problems such as thermal deformation, decreasing of material strength and limitation of cutting region. To solve these problems, internal laser scribing process that generates void in wafer and derives self-crack has been researched. However, studies of sapphire wafer cutting by internal laser scribing process for fabrication of LED chip are still insufficient. In this paper, cutting parameters were determined to apply internal laser scribing process for sapphire wafer for fabrication of LED chip. Then, foundation of cutting condition was established to set up internal laser scribing system through investigation of cutting characteristics by several experiments.
 Keywords
Internal laser scribing;Laser ablation;LED chip;Pulse laser;Sapphire wafer;
 Language
Korean
 Cited by
 References
1.
F. Fukuyo, K. Fukumitsu, N. Uchiyama, "Stealth Dicing Technology and Applications", Proceedings of 6th International Symposium on Laser Precision Microfabrication, pp.1-7, 2005.

2.
S. Rezaei "Burst-Train Generation for Femtosecond Laser Filamentation-driven micromachining" Canada, University of Toronto, 2011.

3.
E. Ohmura, M. Kumagai, M. Nakano, K. Kuno, K. Fukumitsu and H. Morita 'Analysis of Processing Mechanism in Stealth Dicing of Ultra Thin Silicon Wafer', Journal if Advaned Mechanical Design, systems, and Manufacturing, Vol 2, No. 4. p 540-549, 2008. DOI: http://dx.doi.org/10.1299/jamdsm.2.540 crossref(new window)

4.
T. Monodane, E. Ohmura, F. Fukuyo, K. Fukumitsu, H. Morita, and Y. Hirata 'Thermo-Elastic-Plastic Analysis on Internal Processing Phenomena of Single-Crystal Silicon by Nanosecond Laser', JLMN-Journal of Laser Micro/Nanoengineering Vol.1,No.3, p231-235, 2006. DOI: http://dx.doi.org/10.2961/jlmn.2006.03.0016 crossref(new window)

5.
E. Ohmura, Y. Kawahito, K. Fukumitsu, J. Okuma and H. Morita 'Analysis of Internal Crack Propagatio in Silicon Due to Permeable Pulse Laser Irradiation: Study on Processing Mechanism of Stealth Dicing', Journal of Materials Science and Engineering, A1 46-52 2006.

6.
D. Karnakis, E.K Illy, M. R. H Knowles, E. G, M. D.Dawson 'High throughput scribing for the manufacture of LED components', Journal of Vaccum Science Technology, B 24, 2852-2856, 2006. crossref(new window)

7.
J. Choi, R. Bernathm M. Ramme and M. Richardson 'Increase of ablation rate using burst mode femtosecond pulses' Optical Society of America 2007.

8.
R. Paetzel, C. Gmbh, 'Excimer Laser Processing and Laser-Lift-Off of High Brightness LEDs', Semicon Europe October, 11, 2012.