JOURNAL BROWSE
Search
Advanced SearchSearch Tips
A Study on the Characteristics of the Vertical PNP transistor that improves the starting current
facebook(new window)  Pirnt(new window) E-mail(new window) Excel Download
 Title & Authors
A Study on the Characteristics of the Vertical PNP transistor that improves the starting current
Lee, Jung-Hwan;
  PDF(new window)
 Abstract
In this paper, we introduce the characteristics of a vertical PNP transistor that improves start current by decreasing quiescent current with suppressing the parasitic transistor. In order to suppress the parasitic effect, we designed a vertical PNP transistor which suppresses parasitic PNP transistor by using the "DN+ links" without changing the circuit and made a LDO regulator using a standard IC processor. HFE of the fabricated parasitic PNP transistor decreased from conventional 18 to 0.9. Starting current of the LDO regulator made of the vertical PNP transistor using the improved "DN+ linked" structure is reduced from the conventional starting current of 90mA to 32mA. As the result, we developed a LDO regulator which consumes lower power in the standby state.
 Keywords
parasitic PNP transistor;vertical PNP transistor;quiescent current;start current;
 Language
Korean
 Cited by
 References
1.
H. H. Cho, Y. S. Koo, "Capless LDO Regulator with over-current protection circuit", IEEK Conference, pp. 1217-1220, june 2014.

2.
T. S. Park, Y. S. Koo, "A study on the design of high performance Regulator IC using Bi-CDMOS", IEEK Conference, pp. 417-422, May 2005.

3.
D. D. TANG, "Heavy Doping Effects in p-n-p Bipolar Transistors", IEEE Transactions on Electron Devices, Vol. ED-27, No. 3, March 1980.

4.
Sang Hyeon Park, "Low Quiescent Current Output-Capacitorless LDO Regulator With PSR Enhancer" ITC-CSCC pp. 1032-1034. 2015.

5.
S. Chou, "An investigation of lateral transistors-D.C. characteristics", Solid-State Electronics, pp. 811, 1971.

6.
J D. Last, D. W. Lucas and G. W. Sumerling, "A numerical analysis of the d.c. performance of small geometry lateral transistors", Solid-State Electronics, pp. 1111, 1974.