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A Study on the Chemical Properties of AZO with Crystal Structure and IGZO of Amorphous Structure Due to the Annealing Temperature
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  • Journal title : Industry Promotion Research
  • Volume 1, Issue 1,  2016, pp.1-6
  • Publisher : Industrial Promotion Institute
  • DOI : 10.21186/IPR.2016.1.1.001
 Title & Authors
A Study on the Chemical Properties of AZO with Crystal Structure and IGZO of Amorphous Structure Due to the Annealing Temperature
So, Young Ho; Song, Jung Ho; Seo, Dong Myung; Oh, Teresa;
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 Abstract
To research the correlation between the amorphous and crystal structure of oxide semiconductors, AZO and IGZO films were deposited and annealed with various temperatures in a vacuum state. AZO increased the degree of crystal structure with increasing the annealing temperature, but IGZO became an amorphous structure after the annealing process at high temperature. The series of AZO films with various annealing temperatures showed the chemical shift from the analyzer of PL and O 1s spectra, but the results of IGZO films by PL and O 1s spectra were not observed the chemical shift. The binding energy of oxygen vacancy of AZO with a crystal structure was 531.5 eV, and that of IGZO with an amorphous structure was 530 eV as a lower binding energy.
 Keywords
IGZO;AZO;XPS;XRD;ZnO;
 Language
Korean
 Cited by
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