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Comparison between the Electrical Properties and Structures after Atmosphere Annealing and Vacuum Annealing of IGZO Thin Films
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  • Journal title : Industry Promotion Research
  • Volume 1, Issue 1,  2016, pp.7-11
  • Publisher : Industrial Promotion Institute
  • DOI : 10.21186/IPR.2016.1.1.007
 Title & Authors
Comparison between the Electrical Properties and Structures after Atmosphere Annealing and Vacuum Annealing of IGZO Thin Films
Ann, Young Deuk; Yeon, Jae Ho; Oh, Teresa;
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 Abstract
It was the electrical properties of IGZO prepared by the annealing in a vaccum and an atmosphere conditions to research the current-voltage characteristics. The IGZO film annealed in a vaccum became an amorphous structure but films annealed in an atmosphere condition had a crystal structure. Because of the content of oxygen vacancies during the annealing processes was changed, and the annealing in an atmosphere condition increased the oxygen vacancy in IGZO. Oxygen vacancy in IGZO increased the current and then it was observed the Ohmic contact at IGZO annealed in an atmosphere conditions. However, the IGZO prepared in a vaccum showed the Schottky contact.
 Keywords
IGZO;PL;XPS;Binding Energy;Schottky Contact;
 Language
Korean
 Cited by
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