Advanced SearchSearch Tips
Optimization of Binder Burnout for Reaction Bonded Si3N4 Substrate Fabrication by Tape Casting Method
facebook(new window)  Pirnt(new window) E-mail(new window) Excel Download
 Title & Authors
Optimization of Binder Burnout for Reaction Bonded Si3N4 Substrate Fabrication by Tape Casting Method
Park, Ji Sook; Lee, Hwa Jun; Ryu, Sung Soo; Lee, Sung Min; Hwang, Hae Jin; Han, Yoon Soo;
  PDF(new window)
It is a challenge from an industrial point of view to fabricate silicon nitride substrates with high thermal conductivity and good mechanical properties for power devices from high-purity Si scrap powder by means of thick film processes such as tape casting. We characterize the residual carbon and oxygen content after the binder burnout followed by nitridation as a function of the temperature in the temperature range of and the atmosphere in a green tape sample which consists of high-purity Si powder and polymer binders such as polyvinyl butyral and dioctyl phthalate. The optimum condition of binder burnout is suggested in terms of the binder removal temperature and atmosphere. If considering nitridation, the burnout of the organic binder in air compared to that in a nitrogen atmosphere could offer an advantage when fabricating reaction-bonded substrates for power devices to enable low carbon and oxygen contents in green tape samples.
Silicon nitride;Silicon;Tape casting;Reaction bonding;Thick films;
 Cited by
H. Huang, K. J. Winchester, A. Suvorova, B. R. Lawn, Y. Liu, X. Z. Hu, J. M. Dell, and L. Faraone, "Effect of Deposition Conditions on Mechanical Properties of Low-Temperature PECVD Silicon Nitride Films," Mater. Sci. Eng., A435-546 453-59 (2006).

K. Watari, "High Thermal Conductivity Non-Oxide Ceramics," J. Ceram. Soc. Jpn., 109 [1] S7-16 (2001). crossref(new window)

K. Hirao, Y. Zhou, H. Hyuga, T. Ohji, and D. Kusano, "High Thermal Conductivity Silicon Nitride Ceramics," J. Korean Ceram. Soc., 49 [4] 380-84 (2012). crossref(new window)

H. Miyazaki, K. Hirao, and Y. Yoshizawa, "Effects of MgO Addition on the Microwave Dielectric Properties of High Thermal-conductive Silicon Nitride Ceramics Sintered with Ytterbia as Sintering Additives," J. Eur. Ceram. Soc., 32 3297-301 (2012). crossref(new window)

H. Miyazaki, K. Hirao, and Y. Yoshizawa, "Effect of Crystallization of Intergranular Glassy Phases on the Dielectric Properties of Silicon Nitride Ceramics," Mater. Sci. Eng. B, 148 257-60 (2008). crossref(new window)

J. S. Lee, J. H. Mun, B. D. Han, D. S. Park, and H. D. Kim, "Effect of Raw-Si Particle Size on the Mechanical Properties of Sintered RBSN," J. Korean Ceram. Soc., 38 [8] 740-48 (2001).

K. H. Kwak, C. Kim, I. S. Han, and K. S. Lee, "Thermal Shock and Hot Corrosion Resistance of $Si_3N_4$ Fabricated by Nitrided Pressureless Sintering," J. Korean Ceram. Soc., 46 [5] 478-83 (2009). crossref(new window)

X. Zhu, Y. Zhou, K. Hirao, T. Ishigaki, and Y. Sakka, "Potential Use of only $Yb_2O_3$ in Producing Dense $Si_3N_4$ Ceramics with High Thermal Conductivity by Gas Pressure Sintering," Sci. Technol. Adv. Mater., 11 [6] 1-11 (2010).

S. K. Lee, J. D. Morreti, M. J. Readey, and B. R. Lawn, "Thermal Shock Resistance of Silicon Nitrides," J. Am. Ceram. Soc., 85 [1] 279-81 (2002).

M. J. Choi, T. W. Roh, C. Park, D. S. Park, and H. D. Kim, "The Study of Reaction Bonded Silicon Nitride Fabricated Under Static Nitrogen Pressure," J. Korean Ceram. Soc., 37 [5] 505-10 (2000).

M. N. Rahaman and A. J. Moulson, "The Removal of Surface Silica and its Effect upon Silicon Nitridation Kinetics," J. Mater. Sci., 16 [8] 2319-21 (1981). crossref(new window)

B. Lei, O. Babushkin, and R. Warren, "Nitridation Study of Reaction-bonded Silicon Nitride in situ by High Temperature X-Ray Diffraction," J. Eur. Ceram. Soc., 17 [9] 1113-18 (1997). crossref(new window)

J. Y. Park and C. H. Kim, "The Microstructure of the Reaction - Bonded $Si_3N_4$ Formed in the Various Atmosphere," J. Korean Ceram. Soc., 23 [5] 61-6 (1986).

S. J. Hong, H. C. Ahn, and D. J. Kim, "Reaction Bonded $Si_3N_4$ from Si-Polysilazane Mixture," J. Korean Ceram. Soc., 47 [6] 572-77 (2010). crossref(new window)

K. N. Chon and C. H. Kim, "Microstructure Study on $Si_3N_4$ Formed by Various Nitridation Condition," J. Korean Ceram. Soc., 21 [3] 253-58 (1984).

A. J. Moulson, "Reaction-bonded Silicon Nitride: its Formation and Properties," J. Mater. Sci., 14 1017-51 (1979). crossref(new window)

Q. Zhang, X. Luo, W. Li, H. Zhuang, and D. Yan, "Tape Casting of AlN/glass Composites for LTCC Substrate," J. Mater. Sci., 38 [8] 1781-85 (2003). crossref(new window)

W. S. Lee, C. H. Kim, M. S. Ha, S. J. Jeong, J. S. Song, and B. K. Ryu, "The Characterizations of Tape Casting for Low Temperature Sintered Microwave Ceramics Composite," J. Korean Ceram. Soc., 42 [2] 132-39 (2005). crossref(new window)

B. T. Lee, J. H. Yoo, and H. D. Kim, "Fabrication of Silicon Nitride Ceramics Using Semiconductor-Waste-Si Sludge," Korean J. Mater. Res., 9 [12] 1170-75 (1999).

B. R. Golla, J. W. Ko, J. M. Kim, and H. D. Kim, "Effect of Particle Size and Oxygen Content of Si on Processing, Microstructure and Thermal Conductivity of Sintered Reaction Bonded $Si_3N_4$," J. Alloys Compd., 595 60-6 (2014). crossref(new window)

W. Y. Park, D. S. Park, H. D. Kim, and B. D. Han, "Sintering and Mechanical Properties of Silicon Nitride Prepared with a Low-Cost Silicon Nitride Powder," J. Korean Ceram. Soc., 38 [11] 987-92 (2001).