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Optimization of Binder Burnout for Reaction Bonded Si3N4 Substrate Fabrication by Tape Casting Method
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 Title & Authors
Optimization of Binder Burnout for Reaction Bonded Si3N4 Substrate Fabrication by Tape Casting Method
Park, Ji Sook; Lee, Hwa Jun; Ryu, Sung Soo; Lee, Sung Min; Hwang, Hae Jin; Han, Yoon Soo;
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It is a challenge from an industrial point of view to fabricate silicon nitride substrates with high thermal conductivity and good mechanical properties for power devices from high-purity Si scrap powder by means of thick film processes such as tape casting. We characterize the residual carbon and oxygen content after the binder burnout followed by nitridation as a function of the temperature in the temperature range of and the atmosphere in a green tape sample which consists of high-purity Si powder and polymer binders such as polyvinyl butyral and dioctyl phthalate. The optimum condition of binder burnout is suggested in terms of the binder removal temperature and atmosphere. If considering nitridation, the burnout of the organic binder in air compared to that in a nitrogen atmosphere could offer an advantage when fabricating reaction-bonded substrates for power devices to enable low carbon and oxygen contents in green tape samples.
Silicon nitride;Silicon;Tape casting;Reaction bonding;Thick films;
 Cited by
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