Effects of Mixing Ratio of Silicon Carbide Particles on the Etch Characteristics of Reaction-Bonded Silicon Carbide Jung, Youn-Woong; Im, Hangjoon; Kim, Young-Ju; Park, Young-Sik; Song, Jun-Baek; Lee, Ju-Ho;
We prepared a number of reaction-bonded silicon carbides (RBSCs) made from various mixing ratios of raw SiC particles, and investigated their microstructure and etch characteristics by Reactive Ion Etch (RIE). Increasing the amount of -SiC particles results in a microstructure with relatively coarser Si regions. On the other hand, increasing that of -SiC particles produces much finer Si regions. The addition of more than 50 wt% of -SiC particles, however, causes the microstructure to become partially coarse. We also evaluated their etching behaviors in terms of surface roughness (Ra), density and weight changes, and microstructure development by employing Confocal Laser Scanning Microscope (CLSM) and Scanning Electron Microscope (SEM) techniques. During the etching process of the prepared samples, we confirmed that the residual Si region was rapidly removed and formed pits isolating SiC particles as islands. This leads to more intensified ion field on the SiC islands, and causes physical corrosion on them. Increased addition of -SiC particles produces finer residual Si region, and thus decreases the surface roughness (Ra.) as well as causing weight loss after etching process by following the above etching mechanism.
Reaction-bonded silicon carbide;Reactive ion etch;Residual silicon;Etch mechanism;
T. H. Han, "Next-Generation Semiconductor Process/Device Development Trends (in Korean)," pp. 50-54, KEIT, PD Issue Report Vol. 11-04, Seoul, 2009.
J. Y. Ryu, "Silicon Carbide Components for a Semiconductor Manufacturing Process/Materials Technical Analysis Reports (in Korean)," pp. 3-12, KISTI, IOD Report (Serial #:4-0001) Seoul, 2005.
S. K. Jun, "Structural Ceramics Industry Competitiveness Survey (in Korean)," pp. 35-42, 188-190, Korea Fine Ceramic Association, Korean Trade Commission, Seoul, 2010.
J. N. Ness and T. F. Page, "Micro-structural Characterization of Reaction-Bonded Silicon Carbide," J. Mater. Sci., 21 1377-97 (1986).
P. Popper, "The Preparation of Dense Self-Bonded Silicon Carbide," pp. 209-219, in Special Ceramics, Proper, P., Ed., Academic Press. New York, 1960.
R. Pampuch, E. Warasek, and J. Bialoskorski, "Reaction Mechanism in Carbon-Liquid Silicon Systems at Elevated Temperature." Ceram. Int., 12 99-106 (1986).
R. L. Mehan, "Effect of SiC Content and Orientation on the Properties of Si/SiC Ceramic Composite," J. Mater. Sci., 13 358-66 (1978).
C. B. Lim and T. Iseki, "Transport of Fine-Grained $\beta$-SiC in SiC/Liquid Si System," Adv. Ceram. Mater., 3, 291-293 (1988).
C. B. Lim and T. Iseki, "Strength of Reaction Sintered SiC Heterogeneously Containing Fine-Grained $\beta$-SiC," J. Mater. Sci., 23 3248-53 (1988).
C. W Forrest, P. Kennedy, and J. V. Shennan, "The Fabrication and Properties of Self-Bonded Silicon Carbide Bodies," pp. 99-127, Special Ceramics Vol. 5, British Ceram., Res. Asso. U.K., 1972.
H. C. Park, "Effect of Green Microstructure on Sintered Microstructure and Mechanical Properties of Reaction-Bonded Silicon Carbide (in Korean)," J. Korean Ceram. Soc., 36  97-105 (1999).
H. I. Shin, "Silicon Melt Infiltration of Reaction-Bonded Silicon Carbide (in Korean)," J. Korean Ceram. Soc., 39  693-98 (2002).
J. Sugiura, W. J. Lu, K. C Cadien, and A. J. Steckl, "Reactive Ion Etching of SiC Thin Films Using Fluorinated Gases," J. Vac. Sci. Technol. B, 4  349-54 (1986).
G. S. Oehrlein, P. J. Matsuo, and M. F. Doemling, "Study of Plasma-Surface Interactions : Chemical Dry Etching and High-Density Plasma Etching," Plasma Sources Sci. Technol., 5 193-99 (1996).
J. Hong, R. J. Shul, L. Zhang, and L. F. Lester, "Plasma Chemistries for High Density Plasma Etching of SiC," J. Elect. Mater., 28  196-201 (1999).