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Properties of MgMoO4:Eu3+ Phosphor Thin Films Grown by Radio-frequency Magnetron Sputtering Subjected to Thermal Annealing Temperature
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  • Journal title : Current Photovoltaic Research
  • Volume 4, Issue 1,  2016, pp.25-29
  • Publisher : Korea Photovoltaic Society
  • DOI : 10.21218/CPR.2016.4.1.025
 Title & Authors
Properties of MgMoO4:Eu3+ Phosphor Thin Films Grown by Radio-frequency Magnetron Sputtering Subjected to Thermal Annealing Temperature
Cho, Shinho;
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-activated phosphor thin films were grown at on quartz substrates by radio-frequency magnetron sputter deposition from a 15 mol% Eu-doped target. After the deposition, the phosphor thin films were annealed at several temperatures for 30 min in air. The influence of thermal annealing temperature on the structural and optical properties of phosphor thin films was investigated by using X-ray diffraction (XRD), photoluminescence (PL), and ultraviolet-visible spectrophotometry. The transmittance, optical band gap, and intensities of the luminescence and excitation spectra of the thin films were found to depend on the thermal annealing temperature. The XRD patterns indicated that all the thin films had a monoclinic structure with a main (220) diffraction peak. The highest average transmittance of 91.3% in the wavelength range of 320~1100 nm was obtained for the phosphor thin film annealed at . At this annealing temperature the optical band gap energy was estimated as 4.83 eV. The emission and excitation spectra exhibited that the phosphor thin films could be effectively excited by near ultraviolet (281 nm) light, and emitted the dominant 614 nm red light. The results show that increasing RTA temperature can enhance emission and excitation intensity.
Thin film;Annealing;Sputtering;Phosphor;
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