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Optimization of the Phosphorus Doped BSF Doping Profile and Formation Method for N-type Bifacial Solar Cells
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  • Journal title : Current Photovoltaic Research
  • Volume 4, Issue 2,  2016, pp.31-41
  • Publisher : Korea Photovoltaic Society
  • DOI : 10.21218/CPR.2016.4.2.031
 Title & Authors
Optimization of the Phosphorus Doped BSF Doping Profile and Formation Method for N-type Bifacial Solar Cells
Cui, Jian; Ahn, Shihyun; Balaji, Nagarajan; Park, Cheolmin; Yi, Junsin;
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 Abstract
n-type PERT (passivated emitter, rear totally diffused) bifacial solar cells with boron and phosphorus diffusion as p+ emitter and n+ BSF (back surface field) have attracted significant research interest recently. In this work, the influences of wafer thickness, bulk lifetime, emitter, BSF on the photovoltaic characteristics of solar cells are discussed. The performance of the solar cell is determined by using one-dimensional solar cell simulation software PC1D. The simulation results show that the key role of the BSF is to decrease the surface doping concentration reducing the recombination and thus, increasing the cell efficiency. A lightly phosphorus doped BSF (LD BSF) was experimentally optimized to get low surface dopant concentration for n type bifacial solar cells. Pre-oxidation combined with a multi-plateau drive-in, using limited source diffusion was carried out before pre-deposition. It could reduce the surface dopant concentration with minimal impact on the sheet resistance.
 Keywords
N-type;Bifacial silicon solar cell;BSF;Diffusion;PC1D simulation;
 Language
English
 Cited by
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