Time-Dependent Dielectric Breakdown of a Polycrystalline and a Multilayered $BaTiO_3$ Thin Films

다결정 및 다층구조 $BaTiO_3$ 박막의 Time-Dependent Dielectric Breakdown 특성

  • 오정훈 (한국과학기술연구원 정보전자연구부) ;
  • 송만호 (한국과학기술연구원 정보전자연구부) ;
  • 이윤희 (한국과학기술연구원 정보전자연구부) ;
  • 박창엽 (연세대학교 전기공학과) ;
  • 오명환 (한국과학기술연구원 정보전자연구부)
  • Published : 1996.07.22


The dielectric reliability of a polycrystalline and a multilayered $BaTiO_3$ thin films was evaluated using a time-zero dielectric breakdown (TZDB) and a time-dependent dielectric breakdown (TDDB) techniques. The $BaTiO_3$ thin films were prepared by rf-magnetron sputtering technique on ITO-coated glass substrates. In case of the multilayered $BaTiO_3$ thin film, the dielectric breakdown histogram, which was obtained from the TZDB measurements, showed a typical Weibull distribution. While in case of polycrystalIine $BaTiO_3$ thin film, a randomly distributed dielectric breakdown histogram was observed. The TDDB results of the multilayered $BaTiO_3$ thin film guaranteed about $10^5$ hours-operation under the stress field of 1 MV/cm.