Investigation of phenol phormaldehyde-based photoresist at an initial stage of destruction in $O_2$ and $N_2O$ radiofrequency discharges

  • Shutov, D.A. (Dept. of Electronic Devices & Materials Technology, Ivanovo State University of Chemistry & Technology) ;
  • Kang, Seung-Youl (IT Convergence & Components Laboratory, ETRI) ;
  • Baek, Kyu-Ha (IT Convergence & Components Laboratory, ETRI) ;
  • Suh, Kyung-Soo (IT Convergence & Components Laboratory, ETRI) ;
  • Min, Nam-Ki (Dept. of Control and Instrumentation Engineering, Korea University) ;
  • Kwon, Kwang-Ho (Dept. of Control and Instrumentation Engineering, Korea University)
  • Published : 2007.11.01


Etch rates and surface chemistry of phenol formaldehyde-based photoresist after short time $O_2\;and\;N_2O$ radio frequency (RF) plasma treatment depending on exposure time were investigated. It was found that the etch rate of photoresist sharply increased after discharge turn on and reached a limit with increase in plasma exposure time in both gases. X-ray photoelectron spectroscopy (XPS) analysis showed that the surface chemical structure become nearly constant after the treatment of 15 sec. Concentration of surface oxygen-containing groups after processing both in oxygen and in $N_2O$ plasmas is similar.