Electrical Characteristics of IGBT for Gate Bias under ${\gamma}$ Irradiation

게이트바이어스에서 감마방사선의 IGBT 전기적특성

  • Lho, Young-Hwan (Department of Railroad Electricity and Information Communication, Woosong University) ;
  • Lee, Sang-Yong (R&D Division, Kodensi Korea Corp.) ;
  • Kim, Jong-Dae (NT Convergence Components Research Department, ETRI)
  • 노영환 (우송대학교 철도전기 정보통신학부) ;
  • 이상용 (한국고덴시(주) 연구소) ;
  • 김종대 (전자통신연구원 융합부품연구부)
  • Published : 2008.10.31

Abstract

The experimental results of exposing IGBT (Insulated Gate Bipolar Transistor) samples to gamma radiation source show shifting of threshold voltages in the MOSFET and degradation of carrier mobility and current gains. At low total dose rate, the shift of threshold voltage is the major contribution of current increases, but for more than some total dose, the current is increased because of the current gain degradation occurred in the vertical PNP at the output of the IGBTs. In the paper, the collector current characteristics as a function of gate emitter voltage (VGE) curves are tested and analyzed with the model considering the radiation damage on the devices for gate bias and different dose. In addition, the model parameters between simulations and experiments are found and studied.